參數(shù)資料
型號(hào)： ADG819BRM
廠商： ANALOG DEVICES INC
元件分類： 運(yùn)動(dòng)控制電子
英文描述： REC3-SR_DR/H1 Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 15V; Power: 3W; Low Cost 3W converter in DIP24 Package; 1kVDC Isolation; Regulated Output; UL Approved; Continuous Short Circuit Protection; Internal SMD design; 3 Pinout Options, 3 Case Styles.; Efficiency to 75%
中文描述： 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO8
封裝： MICRO, SOIC-8
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 195K
代理商： ADG819BRM
REV. 0
–3–
ADG819/ADG820
SPECIFICATIONS
1
(V
DD
= 2.7 V to 3.6 V, GND = 0 V.)
–40 C to –40 C to
+85 C
Parameter
25 C
+125 C
2
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
ON Resistance (R
ON
)
0 V to V
DD
V
typ
max
0.7
1.4
V
S
= 0 V to V
DD
, I
S
= 100 mA;
Test Circuit 1
1.5
1.6
ON Resistance Match Between
Channels (
R
ON
)
0.06
typ
max
typ
V
S
= 0 V to V
DD
, I
S
= 100 mA
0.13
0.13
ON Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
0.25
V
S
= 0 V to V
DD
, I
S
= 100 mA
V
DD
= 3.6 V
V
S
= 3.3 V/1 V, V
D
= 1 V/3.3 V;
Test Circuit 2
V
S
= V
D
= 1 V, or V
S
= V
D
= 3.3 V;
Test Circuit 3
±
0.01
±
0.25
±
0.01
±
0.25
nA typ
nA max
nA typ
nA max
±
3
±
10
Channel ON Leakage I
D
, I
S
(ON)
±
3
±
25
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
2.0
0.8
V min
V max
0.005
μ
A typ
μ
A max
pF typ
V
IN
= V
INL
or V
INH
±
0.1
C
IN,
Digital Input Capacitance
DYNAMIC CHARACTERISTICS
3
ADG819
t
ON
5
40
60
10
16
40
ns typ
ns max
ns typ
ns max
ns typ
ns min
R
L
= 50
, C
L
= 35 pF,
V
S
= 1.5 V; Test Circuit 4
R
L
= 50
, C
L
= 35 pF,
V
S
= 1.5 V; Test Circuit
R
L
= 50
, C
L
= 35 pF,
V
S1
= V
S2
= 1.5 V; Test Circuit 5
65
70
t
OFF
18
21
Break-Before-Make Time Delay, t
BBM
1
ADG820
t
ON
20
35
30
45
10
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
R
L
= 50
, C
L
= 35 pF,
V
S
= 1.5 V; Test Circuit 4
R
L
= 50
, C
L
= 35 pF,
V
S
= 1.5 V; Test Circuit 4
R
L
= 50
, C
L
= 35 pF,
V
S
= 1.5 V; Test Circuit 6
V
S
= 1.5 V, R
S
= 0
,
C
L
= 1 nF;
Test Circuit 7
R
L
= 50
, C
L
= 5 pF, f = 100 kHz;
Test Circuit 8
R
L
= 50
, C
L
= 5 pF, f = 100 kHz;
Test Circuit 10
R
L
= 50
, C
L
= 5 pF; Test Circuit 9
f = 1 MHz
f = 1 MHz
40
45
t
OFF
50
55
Make-Before-Break Time Delay, t
MBB
1
Charge Injection
10
Off Isolation
–71
dB typ
Channel-to-Channel Crosstalk
–72
dB typ
Bandwidth –3 dB
C
S
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
17
80
300
MHz typ
pF typ
pF typ
V
DD
= 3.6 V
Digital Inputs = 0 V or 3.6 V
I
DD
0.001
μ
A typ
μ
A max
1.0
2.0
NOTES
1
Temperature range is as follows: –40
°
C to +125
°
C.
2
ON resistance parameters tested with I
S
= 10 mA.
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
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