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ADG658/ADG659
Rev. B | Page 3 of 20
SPECIFICATIONS
DUAL SUPPLY
VDD = +5 V ± 10%, VSS = 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
B Version
Y Version
Parameter
+25°C
40°C
to +85°C
40°C
to+125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VSS to VDD
V
VDD = +4.5 V, VSS = 4.5 V
On Resistance (RON)
45
Ω typ
75
90
100
Ω max
On Resistance Match between
1.3
Ω typ
Channels (RON)
3
3.2
3.5
Ω max
VS = 3.5 V, IS = 1 mA
On Resistance Flatness (RFLAT(ON))
10
Ω typ
VDD = +5 V, VSS = 5 V;
16
17
18
Ω max
VS = ±3 V, IS = 1 mA
LEAKAGE CURRENTS
VDD = +5.5 V, VSS = 5.5 V
Source OFF Leakage IS (OFF)
±0.005
nA typ
VD = ±4.5 V, VS =
4.5 V; see
m
±0.2
±5
nA max
Drain OFF Leakage ID (OFF)
±0.005
nA typ
VD = ±4.5 V, VS =
4.5 V; see
m
ADG658
±0.2
±5
nA max
ADG659
±0.1
±2.5
nA max
Channel ON Leakage ID, IS (ON)
±0.005
nA typ
ADG658
±0.2
±5
nA max
ADG659
±0.1
±2.5
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.4
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±1
μA max
CIN, Digital Input Capacitance
2
pF typ
tTRANSITION
80
ns typ
RL = 300 Ω, CL = 35 pF
115
140
165
ns max
tON (EN)
80
ns typ
RL = 300 Ω, CL = 35 pF
115
140
165
ns max
tOFF (EN)
30
ns typ
RL = 300 Ω, CL = 35 pF
45
50
55
ns max
Break-Before-Make Time Delay, tBBM
50
ns typ
RL = 300 Ω, CL = 35 pF
10
ns min
Charge Injection
2
pC typ
VS = 0 V, RS = 0 Ω,
4
pC max
Off Isolation
90
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Total Harmonic Distortion, THD + N
0.025
% typ
RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz
Channel-to-Channel Crosstalk
(ADG659)
90
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 3 dB Bandwidth
ADG658
210
MHz typ
ADG659
400
MHz typ