VDD = 12 V ± 10%, V
參數(shù)資料
型號(hào): ADG1209YRZ
廠商: Analog Devices Inc
文件頁數(shù): 16/20頁
文件大小: 0K
描述: IC MULTIPLEXER DUAL 4X1 16SOIC
產(chǎn)品培訓(xùn)模塊: iCMOS™ Switches and Multiplexers for Data Acquisition
Switch Fundamentals
設(shè)計(jì)資源: Parametric Measurement Unit and Supporting Components for PAD Appls Using AD5522 and AD7685 (CN0104)
標(biāo)準(zhǔn)包裝: 48
系列: iCMOS®
功能: 多路復(fù)用器
電路: 2 x 4:1
導(dǎo)通狀態(tài)電阻: 475 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 12V,±15V
電流 - 電源: 220µA
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC
包裝: 管件
產(chǎn)品目錄頁面: 789 (CN2011-ZH PDF)
ADG1208/ADG1209
Rev. B | Page 5 of 20
SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.1
Table 2.
Parameter
+25C
40C to
+85C
40C to
+125C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance, RON
300
Ω typ
VS = 0 V to 10 V, IS = 1 mA, see Figure 29
475
567
625
Ω max
VDD = 10.8 V, VSS = 0 V
On Resistance Match Between Channels, RON
5
Ω typ
VS = 0 V to 10 V, IS = 1 mA
16
26
27
Ω max
On Resistance Flatness, RFLAT (On)
60
Ω typ
VS = 3 V/6 V/9 V, IS = 1 mA
LEAKAGE CURRENTS
VDD = 13.2 V
Source Off Leakage, IS (Off )
±0.003
nA typ
VS = 1 V/10 V, VD = 10 V/1 V, see Figure 30
±0.1
±0.6
±1
nA max
Drain Off Leakage, ID (Off )
±0.003
nA typ
VS = 1 V/10 V, VD = 10 V/1 V, see Figure 30
ADG1208
±0.1
±0.6
±1
nA max
ADG1209
±0.1
±0.6
±1
nA max
Channel On Leakage ID, IS (On)
±0.02
nA typ
VS = VD = 1 V or 10 V, see Figure 31
ADG1208
±0.2
±0.6
±1
nA max
ADG1209
±0.2
±0.6
±1
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
±0.001
±0.1
μA max
VIN = VINL or VINH
Digital Input Capacitance, CIN
3
pF typ
DYNAMIC CHARACTERISTICS2
Transition Time, tTRANSITION
100
ns typ
RL = 300 Ω, CL = 35 pF
170
210
235
VS = 8 V, see Figure 32
tON (EN)
90
ns typ
RL = 300 Ω, CL = 35 pF
110
140
160
VS = 8 V, see Figure 34
tOFF (EN)
105
ns typ
RL = 300 Ω, CL = 35 pF
130
155
175
VS = 8 V, see Figure 34
Break-Before-Make Time Delay, tBBM
45
ns typ
RL = 300 Ω, CL = 35 pF
20
ns min
VS1 = VS2 = 8 V, see Figure 33
Charge Injection
0.2
pC typ
VS = 6 V, RS = 0 Ω, CL = 1 nF, see Figure 35
Off Isolation
85
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36
Channel-to-Channel Crosstalk
85
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 38
3 dB Bandwidth
450
MHz typ
RL = 50 Ω, CL = 5 pF, see Figure 37
CS (Off )
1.2
pF typ
f = 1 MHz, VS = 6 V
1.8
pF max
f = 1 MHz, VS = 6 V
CD (Off ) ADG1208
7.5
pF typ
f = 1 MHz, VS = 6 V
9
pF max
f = 1 MHz, VS = 6 V
CD (Off ) ADG1209
4.5
pF typ
f = 1 MHz, VS = 6 V
5.5
pF max
f = 1 MHz, VS = 6 V
CD, CS (On) ADG1208
9
pF typ
f = 1 MHz, VS = 6 V
10.5
pF max
f = 1 MHz, VS = 6 V
CD, CS (On) ADG1209
6
pF typ
f = 1 MHz, VS = 6 V
7.5
pF max
f = 1 MHz, VS = 6 V
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