參數(shù)資料
型號: ADF4252BCPZ
廠商: Analog Devices Inc
文件頁數(shù): 23/28頁
文件大?。?/td> 0K
描述: IC PLL FREQ SYNTHESIZER 24-LFCSP
標準包裝: 1
類型: 時鐘/頻率合成器(RF/IF),分數(shù)-N,整數(shù)-N,
PLL:
輸入: CMOS,TTL
輸出: 時鐘
電路數(shù): 1
比率 - 輸入:輸出: 3:2
差分 - 輸入:輸出: 是/無
頻率 - 最大: 3GHz
除法器/乘法器: 是/無
電源電壓: 2.7 V ~ 3.3 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-VFQFN 裸露焊盤,CSP
供應商設備封裝: 24-LFCSP-VQ(4x4)
包裝: 托盤
產(chǎn)品目錄頁面: 551 (CN2011-ZH PDF)
配用: EVAL-ADF4252EBZ2-ND - BOARD EVAL ADF4252 NO VCO/FILTER
REV. B
–4–
ADF4252
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADF4252 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Temperature
Package
Mode
Range
Option
*
ADF4252BCP
–40C to +85C
CP-24
ADF4252BCP-REEL
–40C to +85C
CP-24
ADF4252BCP-REEL7
–40C to +85C
CP-24
EVAL–ADF4252EB1
EVAL–ADF4252EB2
*CP = Chip Scale Package
PIN CONFIGURATION
PIN 1
INDICATOR
TOP VIEW
(Not to Scale)
18 CPGND2
17 DVDD
16 IFINA
15 IFINB
CPRF 1
CPGND1 2
RFINA 3
24
V
P
1
14 AGND2
13 RSET
REF
IN
7
REF
OUT
8
D
GND
9
CLK
10
DA
T
A
11
LE
1
2
RFINB 4
AGND1 5
MUXOUT 6
23
V
DD
1
22
V
DD
3
21
V
DD
2
20
V
P
2
19
CP
IF
ADF4252
ABSOLUTE MAXIMUM RATINGS
1, 2
(TA = 25
°C, unless otherwise noted.)
VDD1, VDD2, VDD3, DVDD to GND
3
. . . . . . . . –0.3 V to +4 V
REFIN, RFINA, RFINB to GND . . . . . . –0.3 V to VDD + 0.3 V
VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.8 V
VP1, VP2 to VDD1 . . . . . . . . . . . . . . . . . . . . . –3.3 V to +3.5 V
Digital I/O Voltage to GND . . . . . . . . –0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND . . . . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . 150
°C
CSP JA Thermal Impedance . . . . . . . . . . . . . . . . . . . 122
°C/W
Soldering Reflow Temperature
Vapor Phase (60 sec max) . . . . . . . . . . . . . . . . . . . . . 240
°C
IR Reflow (20 sec max) . . . . . . . . . . . . . . . . . . . . . . . 240
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2This device is a high performance RF integrated circuit with an ESD rating
of <2 k
, and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3GND = CP
GND1, AGND1, DGND, AGND2, and CPGND2.
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