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參數(shù)資料
| 型號： | ADF4112BRUZ-REEL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 25/28頁 |
| 文件大小： | 0K |
| 描述： | IC PLL RF FREQ SYNTHESZR 16TSSOP |
| 標準包裝： | 1,000 |
| 類型： | 時鐘/頻率合成器，RF |
| PLL： | 是 |
| 輸入： | CMOS，TTL |
| 輸出： | 時鐘 |
| 電路數(shù)： | 1 |
| 比率 - 輸入:輸出： | 2:1 |
| 差分 - 輸入:輸出： | 是/無 |
| 頻率 - 最大： | 3GHz |
| 除法器/乘法器： | 是/無 |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-TSSOP（0.173"，4.40mm 寬） |
| 供應商設備封裝： | 16-TSSOP |
| 包裝： | 帶卷 (TR) |
| 配用： | EVAL-ADF4112EBZ1-ND - BOARD EVAL FOR ADF4112 EVAL-ADF411XEBZ1-ND - BOARD EVAL FOR ADF411X NO CHIP |
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ADF4110/ADF4111/ADF4112/ADF4113
Data Sheet
Rev. F | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted
Table 3.
Parameter
Rating
0.3 V to +7 V
AVDD to DVDD
0.3 V to +0.3 V
VP to GND
0.3 V to +7 V
VP to AVDD
0.3 V to +5.5 V
Digital I/O Voltage to GND
0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND
0.3 V to VDD + 0.3 V
RFINA to RFINB
±320 mV
Operating Temperature Range
Industrial (B Version)
40°C to +85°C
Storage Temperature Range
65°C to +150°C
Maximum Junction Temperature
150°C
TSSOP θJA Thermal Impedance
150.4°C/W
LFCSP θJA Thermal Impedance
(Paddle Soldered)
122°C/W
LFCSP θJA Thermal Impedance
(Paddle Not Soldered)
216°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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