AD8614/AD8644
Rev. B | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
5 V ≤ VS ≤ 18 V, VCM = VS/2, TA = 25°C, unless otherwise noted.1 Table 1.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
1.0
2.5
mV
20°C ≤ TA ≤ +85°C
3
mV
Input Bias Current
IB
80
400
nA
20°C ≤ TA ≤ +85°C
500
nA
Input Offset Current
IOS
5
100
nA
20°C ≤ TA ≤ +85°C
200
nA
Input Voltage Range
0
VS
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to VS
60
75
dB
Voltage Gain
AVO
VOUT = 0.5 V to VS – 0.5 V, RL = 10 kΩ
10
150
V/mV
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
ILOAD = 10 mA
VS 0.15
V
Output Voltage Low
VOL
ILOAD = 10 mA
65
150
mV
Output Short-Circuit Current
ISC
35
70
mA
20°C ≤ TA ≤ +85°C
30
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ±2.25 V to ±9.25 V
80
110
dB
Supply Current/Amplifier
ISY
0.8
1.1
mA
20°C ≤ TA ≤ +85°C
1.5
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
CL = 200 pF
7.5
V/μs
Gain Bandwidth Product
GBP
5.5
MHz
Phase Margin
Φo
65
Degrees
Settling Time
tS
0.01%, 10 V step
3
μs
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
12
nV/√Hz
en
f = 10 kHz
11
nV/√Hz
Current Noise Density
in
f = 10 kHz
1
pA/√Hz
1 All typical values are for VS = 18 V.