AD8400/AD8402/AD8403
Rev. E | Page 11 of 32
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter
Rating
VDD to GND
0.3 V, +8 V
VA, VB, VW to GND
0 V, VDD
Maximum Current
IWB, IWA Pulsed
±20 mA
IWB Continuous (RWB ≤ 1 kΩ, A Open)1 ±5 mA
IWA Continuous (RWA ≤ 1 kΩ, B Open)1 ±5 mA
IAB Continuous (RAB = 1 kΩ/10 kΩ/
±2.1 mA/±2.1 mA/
±540 μA/±540 μA
Digital Input and Output Voltage
to GND
0 V, 7 V
Operating Temperature Range
40°C to +125°C
Maximum Junction Temperature
(TJ Maximum)
150°C
Storage Temperature
65°C to +150°C
Lead Temperature (Soldering, 10 sec)
300°C
Package Power Dissipation
(TJ max TA)/θJA
Thermal Resistance (θJA)
SOIC (R-8)
158°C/W
PDIP (N-14)
83°C/W
PDIP (N-24)
63°C/W
SOIC (R-14)
120°C/W
SOIC (R-24)
70°C/W
TSSOP-14 (RU-14)
180°C/W
TSSOP-24 (RU-24)
143°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
SERIAL DATA-WORD FORMAT
Table 6.
ADDR
DATA
B9
B8
B7
B6
B5
B4
B3
B2
B1
B0
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
MSB
LSB
MSB
LSB
29
28
27
20
1 Maximum terminal current is bounded by the maximum applied voltage
across any two of the A, B, and W terminals at a given resistance, the maximum
current handling of the switches, and the maximum power dissipation of the
package; VDD = 5 V.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.