參數(shù)資料
型號: AD8072JRZ-REEL7
廠商: Analog Devices Inc
文件頁數(shù): 9/13頁
文件大?。?/td> 0K
描述: IC VIDEO AMP DUAL 8-SOIC T/R
標準包裝: 1,000
應用: 電流反饋
電路數(shù): 2
-3db帶寬: 100MHz
轉(zhuǎn)換速率: 500 V/µs
電流 - 電源: 3.5mA
電流 - 輸出 / 通道: 30mA
電壓 - 電源,單路/雙路(±): 5 V ~ 12 V,±2.5 V ~ 6 V
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設(shè)備封裝: 8-SOIC
包裝: 帶卷 (TR)
REV. D
AD8072/AD8073
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8072/AD8073 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V
Internal Power Dissipation2
AD8072 8-Lead Plastic (N) . . . . . . . . . . . . . . . . . . 1.3 Watts
AD8072 8-Lead Small Outline (SO-8) . . . . . . . . . 0.9 Watts
AD8072 8-Lead
SOIC (RM) . . . . . . . . . . . . . . . . 0.6 Watts
AD8073 14-Lead Plastic (N) . . . . . . . . . . . . . . . . . 1.6 Watts
AD8073 14-Lead Small Outline (R) . . . . . . . . . . . 1.0 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . .
±1.25 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range
N, R, RM Packages . . . . . . . . . . . . . . . . . . –65
°C to +125°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead Plastic Package:
θ
JA = 90
°C/W
8-Lead SOIC Package:
θ
JA = 140
°C/W
8-Lead
SOIC Package: θ
JA = 214
°C/W
14-Lead Plastic Package:
θ
JA = 75
°C/W
14-Lead SOIC Package:
θ
JA = 120
°C/W
ORDERING GUIDE
Temperature
Package
Model
Range
Description
Option
*AD8072ARM
–40
°C to +85°C 8-Lead SOIC
RM-8
*AD8072ARM-REEL –40
°C to +85°C 13" Reel 8-Lead SOIC RM-8
*AD8072ARM-REEL7 –40
°C to +85°C 7" Reel 8-Lead SOIC RM-8
AD8072JN
0
°C to 70°C
8-Lead Plastic DIP
N-8
AD8072JR
0
°C to 70°C
8-Lead SOIC
SO-8
AD8072JR-REEL
0
°C to 70°C
13" Reel 8-Lead SOIC SO-8
AD8072JR-REEL7
0
°C to 70°C
7" Reel 8-Lead SOIC
SO-8
AD8073JN
0
°C to 70°C
14-Lead Plastic DIP
N-14
AD8073JR
0
°C to 70°C
14-Lead Narrow SOIC R-14
AD8073JR-REEL
0
°C to 70°C
13" Reel 14-Lead SOIC R-14
AD8073JR-REEL7
0
°C to 70°C
7" Reel 14-Lead SOIC R-14
*Brand Code: HLA
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8072
and AD8073 is limited by the associated rise in junction tem-
perature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately 150
°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175
°C for an extended
period can result in device failure.
While the AD8072 and AD8073 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maximum
junction temperature (150
°C) is not exceeded under all condi-
tions. To ensure proper operation, it is necessary to observe the
maximum power derating curves shown in Figures 2 and 3.
MAXIMUM
POWER
DISSIPATION
W
AMBIENT TEMPERATURE – C
2.0
1.5
0
–50
90
–40 –30 –20 –10
0
10
20
30
5060
7080
40
1.0
0.5
8-LEAD MINI-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = 150 C
SOIC
Figure 2. AD8072 Maximum Power Dissipation vs.
Temperature
AMBIENT TEMPERATURE – C
2.5
2.0
0.5
–50
90
–40
MAXIMUM
POWER
DISSIPATION
W
–30 –20 –10 0
1020
3040 50
60
80
1.5
1.0
70
14-LEAD SOIC
14-LEAD DIP PACKAGE
TJ = 150 C
Figure 3. AD8073 Maximum Power Dissipation vs.
Temperature
WARNING!
ESD SENSITIVE DEVICE
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