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參數(shù)資料
| 型號(hào)： | AD648CQ |
| 廠(chǎng)商： | ANALOG DEVICES INC |
| 元件分類(lèi)： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Dual Precision, Low Power BiFET Op Amp |
| 中文描述： | DUAL OP-AMP, 500 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP8 |
| 封裝： | CERDIP-8 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 335K |
| 代理商： | AD648CQ |
WARNING!
ESD SENSITIVE DEVICE
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD648 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
AD648
NOT ES
1
Input Offset Voltage specifications are guaranteed after 5 minutes of operation at T
= +25
°
C.
2
Bias Current specifications are guaranteed maximum at either input after 5 minutes of operation at T
A
= +25
°
C. For higher temperature, the current doubles
every 10
°
C.
3
Matching is defined as the difference between parameters of the two amplifiers.
4
Defined as voltages between inputs, such that neither exceeds
±
10 V from ground.
Specifications subject to change without notice.
ABSOLUT E MAX IMUM RAT INGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Internal Power Dissipation
2
. . . . . . . . . . . . . . . . . . . .500 mW
Input Voltage
3
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . +V
S
and –V
S
Storage T emperature Range (Q, H) . . . . . . . .–65
°
C to +150
°
C
Storage T emperature Range
(N, R) . . . . . . . .–65
°
C to +125
°
C
Operating T emperature Range
AD648J/K . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
AD648A/B/C . . . . . . . . . . . . . . . . . . . . . . . .–40
°
C to +85
°
C
AD648S/T . . . . . . . . . . . . . . . . . . . . . . . . .–55
°
C to +125
°
C
Lead T emperature Range (Soldering 60 sec) . . . . . . . . +300
°
C
NOT ES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. T his is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
T hermal Characteristics:
8-Pin Plastic Package:
θ
JA
= 165
°
C/Watt
8-Pin Cerdip Package:
θ
JC
= 22
°
C/Watt;
θ
JA
= 110
°
C/Watt
8-Pin Metal Package:
θ
JC
= 65
°
C/Watt;
θ
JA
= 150
°
C/Watt
8-Pin SOIC Package:
θ
= 42
°
C/Wat;
θ
= 160
°
C/Watt
3
For supply voltages less than
±
18 V, the absolute maximum input voltage is equal
to the supply voltage.
ME T ALIZAT ION PHOT OGRAPH
C ontact factory for latest dimensions.
Dimensions shown in inches and (mm).
REV. C
–3–
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