參數(shù)資料
型號(hào): AD586
廠(chǎng)商: Analog Devices, Inc.
英文描述: High Precision 5 V Reference(高精度5V電壓基準(zhǔn))
中文描述: 高精度5 V參考(高精度5V的電壓基準(zhǔn))
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 211K
代理商: AD586
AD586
REV. C
–3–
The followng specifications are tested at the die level for AD586JCHIPS. These die are probed at 25
8
C
only. (T
A
= +25
8
C, V
IN
= +15 V unless otherwse noted)
DE SPECIFlCATIONS
AD586JCHIPS
Min
T yp
Parameter
Max
Units
Output Voltage
Gain Adjustment
4.980
+6
–2
5.020
V
%
%
Line Regulation
10.8 V < + V
IN
< 36 V
Load Regulation
Sourcing 0 < I
OUT
< 10 mA
Sinking –10 < I
OUT
< 0 mA
Quiescent Current
Short-Circuit Current-to-Ground
100
±μ
V/V
100
400
3
60
μ
V/mA
μ
V/mA
mA
mA
NOT ES
1
Both V
pads should be connected to the output.
Die T hickness:
T he standard thickness of Analog Devices Bipolar dice is 24 mils
±
2 mils.
Die Dimensions:
T he dimensions given have a tolerance of
±
2 mils.
Backing:
T he standard backside surface is silicon (not plated). Analog Devices does not
recommend gold-backed dice for most applications.
E dges
: A diamond saw is used to separate wafers into dice thus providing perpendicular
edges half-way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size. T he
perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape
and size simplifies substrate design and die attach.
T op Surface:
T he standard top surface of the die is covered by a layer of glassivation. All
areas are covered except bonding pads and scribe lines.
Surface Metalization:
T he metalization to Analog Devices bipolar dice is aluminum.
Minimum thickness is 10,000.
Bonding Pads:
All bonding pads have a minimum size of 4 mils by 4 mils. T he passivation
windows have 3.5 mils by 3.5 mils minimum.
WARNING!
ESD SENSITIVE DEVICE
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD586 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDE RING GUIDE
Initial
E rror
T emperature
Coefficient
T emperature
Range
Package
Option
2
Model
1
AD586JN
AD586JQ
AD586JR
AD586K N
AD586K Q
AD586K R
AD586LN
AD586LR
AD586MN
AD586AR
AD586BR
AD586LQ
AD586SQ
AD586T Q
AD586JCHIPS
20 mV
20 mV
20 mV
5 mV
5 mV
5 mV
2.5 mV
2.5 mV
2 mV
5 mV
2.5 mV
2.5 mV
10 mV
2.5 mV
20 mV
25 ppm/
°
C
25 ppm/
°
C
25 ppm/
°
C
15 ppm/
°
C
15 ppm/
°
C
15 ppm/
°
C
5 ppm/
°
C
5 ppm/
°
C
2 ppm/
°
C
15 ppm/
°
C
5 ppm/
°
C
5 ppm/
°
C
20 ppm/
°
C
10 ppm/
°
C
25 ppm/
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
0
°
C to +70
°
C
–55
°
C to +125
°
C
–55
°
C to +125
°
C
0
°
C to +70
°
C
N-8
Q-8
SO-8
N-8
Q-8
SO-8
N-8
SO-8
N-8
SO-8
SO-8
Q-8
Q-8
Q-8
NOT ES
1
For details on grade and package offerings screened in accordance with MIL-ST D-883, refer to the Analog Devices Military
Products Databook or current AD586/883B data sheet.
2
N = Plastic DIP; Q = Cerdip; SO = Small Outline IC (SOIC).
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