參數(shù)資料
型號(hào)： AD261BND-4
廠商： ANALOG DEVICES INC
元件分類： 微控制器/微處理器
英文描述： High Speed, Logic Isolator
中文描述： 5 I/O, PIA-GENERAL PURPOSE, PQIP16
封裝： STAGGERED, PLASTIC, DIP-22/16
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 183K
代理商： AD261BND-4
AD261
–3–
REV. 0
WARNNG
ESD SENSITIVE DEVICE
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD261 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUT E MAX IMUM RAT INGS*
Parameter
Conditions
Min
T yp
Max
Units
Supply Voltage (+5 V dc
SYS & FLD
)
DC Input Voltage (V
IN MAX
)
DC Output Voltage (V
OUT MAX
)
Clamp Diode Input Current (I
IK
)
Clamp Diode Output Current (I
OK
)
Output DC Current, per Pin (I
OUT
)
DC Current, V
CC
or GND (I
CC
or I
GND
)
Storage T emperature (T
ST G
)
Lead T emperature (Soldering, 10 sec)
Electrostatic Protection (V
ESD
)
–0.5
–0.5
–0.5
–25
–25
–25
–50
–
40
+6.0
+0.5
+0.5
+25
+25
+25
+50
+85
+300
V
V
V
mA
mA
mA
mA
°
C
°
C
kV
Referred to +5 V dc
SYS & FLD
and 5 V RT N
SYS & FLD
Respectively
Referred to +5 V RT N
SYS & FLD
and 5 V dc
SYS & FLD
Respectively
For V
I
< –0.5 V or V
I
> 5 V RT N
SYS & FLD
+
0.5 V
For V
O
< –0.5 V or V
O
> 5 V RT N
SYS & FLD
+
0.5 V
Per MIL-ST D-883, Method 3015
4.5
5
*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. T his is a stress rating only; functional operation of the device
at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended
periods may effect device reliability.
I/O CONFIGURAT IONS AVAILABLE
T he AD261 is available in several configurations. T he choice of
model is determined by the desired number of input vs. output
lines. All models have identical footprints with the power and
enable pins always being in the same locations.
PIN CONFIGURAT ION
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
SYSTEM
FIELD
BOTTOM VIEW
S0
S1
S2
S3
S4
ENABLE
SYS
+5V dc
SYS
5V RTN
SYS
5V RTN
FLD
+5V dc
FLD
ENABLE
FLD
F0
F1
F2
F3
F4
ORDE RING GUIDE
Model
Number
Isolation
Ratings
Package
Description
Package
Option
Description
AD261AND-0
AD261AND-1
AD261AND-2
AD261AND-3
AD261AND-4
AD261AND-5
0 Inputs, 5 Outputs
1 Input, 4 Outputs
2 Inputs, 3 Outputs
3 Inputs, 2 Outputs
4 Inputs, 1 Output
5 Inputs, 0 Outputs
1.75 kV rms
1.75 kV rms
1.75 kV rms
1.75 kV rms
1.75 kV rms
1.75 kV rms
Plastic DIP
Plastic DIP
Plastic DIP
Plastic DIP
Plastic DIP
Plastic DIP
ND-22A
ND-22A
ND-22A
ND-22A
ND-22A
ND-22A
AD261BND-0
AD261BND-1
AD261BND-2
AD261BND-3
AD261BND-4
AD261BND-5
0 Inputs, 5 Outputs
1 Input, 4 Outputs
2 Inputs, 3 Outputs
3 Inputs, 2 Outputs
4 Inputs, 1 Output
5 Inputs, 0 Outputs
3.5 kV rms
3.5 kV rms
3.5 kV rms
3.5 kV rms
3.5 kV rms
3.5 kV rms
Plastic DIP
Plastic DIP
Plastic DIP
Plastic DIP
Plastic DIP
Plastic DIP
ND-22A
ND-22A
ND-22A
ND-22A
ND-22A
ND-22A
PIN FUNCT ION DE SCRIPT IONS
Pin
Mnemonic
Function
1–5*
6
7
8
9–14
15
16
17
18–22* F0 T hrough F4 Digital X mt or Rcv from S0 T hrough S4
S0 T hrough S4
ENABLE
SYS
+5 V dc
SYS
5 V RT N
SYS
Digital X mt or Rcv from F0 T hrough F4
System Output Enable/T hree-State
System Power Supply (+5 V dc Input)
System Power Supply Common
Not Present On Unit
Field Power Supply Common
Field Power Supply (+5 V Input)
Field Output Enable/T hree-State
5 V RT N
FLD
+5 V dc
FLD
ENABLE
FLD
*Function of pin determined by model. Refer to T able I.
相關(guān)PDF資料
PDF描述
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