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參數(shù)資料
| 型號： | ACS30HMSR-03 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 通用總線功能 |
| 英文描述： | Radiation Hardened 8-Input NAND Gate |
| 中文描述： | 8-INPUT NAND GATE, UUC11 |
| 封裝： | 0.094 X 0.094 INCH, DIE-11 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 120K |
| 代理商： | ACS30HMSR-03 |
ACS302-5T3
2/8
Symbol
V
DRM
/ V
RRM
I
T(RMS)
Parameter
Value
500
Unit
V
A
A
A
A
A/
μ
s
Repetitive peak off-state voltage
RMS on-state current full cycle sine wave 50 to 60 Hz
Tj = 125 °C
Tamb = 110 °C One switch on = 0.2
Tamb = 90 °C
F =50 Hz
F =60 Hz
F =120 Hz
Array: 0.4
7.3
7.6
20
I
TSM
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
dI/dt
Critical rate of repetitive rise of on-state current
I
G
= 10mA with tr = 100ns
Non repetitive line peak pulse voltage
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s
V
PP
Tstg
Tj
Tl
note 1
2
kV
°C
°C
°C
- 40 to + 150
- 30 to + 125
260
Note 1
: according to test described by IEC61000-4-5 standard and figure 3.
ABSOLUTE RATINGS
(limiting values)
Symbol
P
G (AV)
I
GM
V
GM
Parameter
Value
0.1
1
5
Unit
W
A
V
Average gate power dissipation
Peak gate current (tp = 20μs)
Peak positive gate voltage (respect to the pin COM)
SWITCH GATE CHARACTERISTICS
(maximum values)
Symbol
Rth (j-a)
Parameter
Value
93
Unit
°C/W
Junction to ambient
THERMAL RESISTANCES
Symbol
Test Conditions
Values
Unit
I
GT
V
OUT
= 12V
R
L
= 140
R
L
= 140
R
L
= 3.3k
Tj=25°C
MAX
5
mA
V
GT
V
OUT
= 12V
Tj=25°C
MAX
0.9
V
V
GD
V
OUT
= V
DRM
Tj=125°C
MIN
0.15
V
I
H
I
OUT
= 100mA gate open
Tj=25°C
TYP
20
mA
MAX
45
I
L
I
G
= 10mA
Tj=25°C
TYP
25
mA
MAX
50
V
TM
I
OUT
= 0.3A
tp = 380
μ
s
Tj=25°C
MAX
1.2
V
I
DRM
I
RRM
V
OUT
= V
DRM
V
OUT
= V
RRM
Tj=25°C
MAX
2
μ
A
Tj=125°C
MAX
200
dV/dt
V
OUT
= 400V gate open
(dV/dt)c = 5V/
μ
s
(dV/dt)c = 10V/μs I
OUT
< 0
Tj=110°C
MIN
300
V/
μ
s
A/ms
(dI/dt)c
I
OUT
> 0
Tj=110°C
MIN
0.1
Tj=110°C
MIN
0.15
A/μs
V
CL
I
CL
= 1mA
tp = 1ms
Tj=25°C
TYP
600
V
ELECTRICAL CHARACTERISTICS
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