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參數(shù)資料
| 型號： | ACS10HMSR |
| 廠商： | INTERSIL CORP |
| 元件分類： | 通用總線功能 |
| 英文描述： | Radiation Hardened Triple Three-Input NAND Gate |
| 中文描述： | AC SERIES, TRIPLE 3-INPUT NAND GATE, UUC16 |
| 封裝： | DIE-16 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | ACS10HMSR |
ACS102-5Tx
6/8
0.01
0.10
1.00
10.00
0.1
1.0
10.0
100.0
tp(ms)
ITSM(A),I2t(A2s)
Tj initial=25°C
ITSM
I2t
dI/dt limitation:
20A/μs
Fig. 11:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp<10ms,
and corresponding value of I
2
t..
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
0.01
0.10
1.00
5.00
VTM(V)
ITM(A)
Tj max.
Vto = 0.85 V
Rd = 400 m
Fig. 12:
On-state characteristics (maximum
values).
0
20
40
60
80 100 120 140 160 180 200 220 240
0
20
40
60
80
100
120
140
160
180
S(mm2)
Rth(j-a) (°C/W)
Fig. 13:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness under “com”
pins: 35
μ
m) (ACS102-5T1).
0
10
20
30
40
50
60
70
80
90 100 110 120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Tj(°C)
(dI/dt)c [Tj] / (dI/dt)c [Tj=110°C]
Fig. 14:
Relative variation of critical (dI/dt)c versus
junction temperature (ACS102-5T1).
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
Number of cycles
ITSM(A)
Tj initial=25°C
Non repetitive
Tamb=25°C
Repetitive
One cycle
t=20ms
Fig. 10:
Surge peak on-state current versus
number of cycles.
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相關(guān)代理商/技術(shù)參數(shù) |
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| ACS10K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Triple Three-Input NAND Gate |
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| ACS10S 100R J | 制造商:Arcol 功能描述: |
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