參數(shù)資料
型號(hào): ACS10HMSR
廠商: INTERSIL CORP
元件分類: 通用總線功能
英文描述: Radiation Hardened Triple Three-Input NAND Gate
中文描述: AC SERIES, TRIPLE 3-INPUT NAND GATE, UUC16
封裝: DIE-16
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 94K
代理商: ACS10HMSR
ACS102-5Tx
5/8
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
IT(RMS)(A)
P(W)
Fig. 5:
Maximum power dissipation versus RMS
on-state current.
0
20
40
60
80
100
120
140
0.00
0.05
0.10
0.15
0.20
0.25
Tamb(°C)
IT(RMS)(A)
Fig. 6:
temperature.
RMS on-state current versus ambient
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
tp(s)
Zth(j-a) / Rth(j-a)
Fig. 7-1:
Relative variation of thermal impedance
junction
to
ambient
versus
(ACS102-5TA) (TO-92).
pulse
duration
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
tp(s)
Zth(j-a) / Rth(j-a)
Fig. 7-2:
Relative variation of thermal impedance
junction to ambient versus pulse duration (printed
circuit board FR4, e(Cu) = 35
μ
m, S(Cu) = 40mm
2
under “com” pins) (ACS102-5T1) (SO-8).
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Tj(°C)
IGT [Tj] / IGT [Tj=25°C]
Fig. 8:
Relative variation of gate trigger current
versus junction temperature.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj(°C)
IH,IL [Tj] / IH,IL [Tj=25°C]
Fig. 9:
Relative variation of holding and latching
current versus junction temperature.
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