- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375225 > AC12BGML Thyristor Product Catalog PDF資料下載
參數(shù)資料
| 型號(hào)： | AC12BGML |
| 英文描述： | Thyristor Product Catalog |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁(yè)數(shù)： | 183/224頁(yè) |
| 文件大?。?/td> | 2697K |
| 代理商： | AC12BGML |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)第159頁(yè)第160頁(yè)第161頁(yè)第162頁(yè)第163頁(yè)第164頁(yè)第165頁(yè)第166頁(yè)第167頁(yè)第168頁(yè)第169頁(yè)第170頁(yè)第171頁(yè)第172頁(yè)第173頁(yè)第174頁(yè)第175頁(yè)第176頁(yè)第177頁(yè)第178頁(yè)第179頁(yè)第180頁(yè)第181頁(yè)第182頁(yè)當(dāng)前第183頁(yè)第184頁(yè)第185頁(yè)第186頁(yè)第187頁(yè)第188頁(yè)第189頁(yè)第190頁(yè)第191頁(yè)第192頁(yè)第193頁(yè)第194頁(yè)第195頁(yè)第196頁(yè)第197頁(yè)第198頁(yè)第199頁(yè)第200頁(yè)第201頁(yè)第202頁(yè)第203頁(yè)第204頁(yè)第205頁(yè)第206頁(yè)第207頁(yè)第208頁(yè)第209頁(yè)第210頁(yè)第211頁(yè)第212頁(yè)第213頁(yè)第214頁(yè)第215頁(yè)第216頁(yè)第217頁(yè)第218頁(yè)第219頁(yè)第220頁(yè)第221頁(yè)第222頁(yè)第223頁(yè)第224頁(yè)
Application Notes
AN1008
2002 Teccor Electronics
Thyristor Product Catalog
AN1008 - 5
http://www.teccor.com
+1 972-580-7777
Figure AN1008.9
Typical Triac Latching (I
L
) Requirements for Four
Quadrants versus Gate Current (I
GT
)
I
H
: Holding Current — SCR and Triac
The holding current is the DC principal on-state current below
which the device will not stay in regeneration/on state after latch-
ing and gate signal is removed. This current is equal to or lower
in value than the latching current (Figure AN1008.1 and Figure
AN1008.2) and is related to and has the same temperature
dependence as the DC gate trigger current shown in Figure
AN1008.10. Both minimum and maximum holding current may be
important. If the device is to stay in conduction at low-anode cur-
rents, the maximum holding current of a device for a given circuit
must be considered. The minimum holding current of a device
must be considered if the device is expected to turn off at a low
DC anode current. Note that the low DC principal current condi-
tion is a DC turn-off mode, and that an initial on-state current
(latching current) is required to ensure that the thyristor has been
fully turned on prior to a holding current measurement.
Figure AN1008.10
Normalized DC Holding Current versus
Case Temperature
dv/dt, Static: Critical Rate-of-rise of Off-state Voltage —
SCR and Triac
Static dv/dt is the minimum rate-of-rise of off-state voltage that
a device will hold off, with gate open, without turning on.
Figure AN1008.11 illustrates the exponential definition. This
value will be reduced by a positive gate signal. This charac-
teristic is temperature-dependent and is lowest at the maxi-
mum-rated junction temperature. Therefore, the characteristic
is determined at rated junction temperature and at rated
forward off-state voltage which is also a worst-case situation.
Line or other transients which might be applied to the thyristor
in the off state must be reduced, so that neither the rate-of-
rise nor the peak voltage are above specifications if false firing
is to be prevented. Turn-on as result of dv/dt is non-destructive
as long as the follow current remains within current ratings of
the device being used.
Figure AN1008.11
Exponential Rate-of-rise of Off-state Voltage
Defining dv/dt
dv/dt, Commutating: Critical Rate-of-rise of
Commutation Voltage — Triac
Commutating dv/dt is the rate-of-rise of voltage across the main
terminals that a triac can support (block without switching back
on) when commutating from the on state in one half cycle to the
off state in the opposite half cycle. This parameter is specified at
maximum rated case temperature (equal to T
J
) since it is temper-
ature-dependent. It is also dependent on current (commutating
di/dt) and peak reapplied voltage (line voltage) and is specified at
rated current and voltage. All devices are guaranteed to commu-
tate rated current with a resistive load at 50 Hz to 60 Hz. Com-
mutation of rated current is not guaranteed at higher frequencies,
and no direct relationship can be made with regard to current/
temperature derating for higher-frequency operation. With induc-
tive loading, when the voltage is out of phase with the load cur-
rent, a voltage stress (dv/dt) occurs across the main terminals of
the triac during the zero-current crossing. (Figure AN1008.12) A
snubber (series RC across the triac) should be used with induc-
tive loads to decrease the applied dv/dt to an amount below the
minimum value which the triac can be guaranteed to commutate
off each half cycle.
II
III
IV
I
0
1.0
2.0
3.0
4.0
5.0
6.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
I
L
I
GT
— mA
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (TC) – C
I
H
C
R
I
H
INITIAL ON-STATE CURRENT
= 400 mA dc
Critical dv/dt
dt
V
D
t
t = RC
0
t
63% of V
D
V
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AC12BSM | Thyristor Product Catalog |
| AC12DGML | Thyristor Product Catalog |
| AC12DSM | MAX CLIP RoHS Compliant: Yes NC/NR |
| AC12EGML | Thyristor Product Catalog |
| AC12ESM | Thyristor Product Catalog |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AC12BSM | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| AC12DGM | 制造商:NEC 制造商全稱:NEC 功能描述:12A MOLD TRIAC |
| AC12DGML | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| AC12DSM | 制造商:TECCOR 制造商全稱:TECCOR 功能描述:Thyristor Product Catalog |
| AC12DSMA | 制造商:NEC 制造商全稱:NEC 功能描述:12A RESIN INSULATION TYPE TRIAC |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。