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參數(shù)資料
| 型號： | AAT9460 |
| 廠商： | Advanced Analogic Technologies, Inc. |
| 英文描述： | 30V N-Channel Power MOSFET |
| 中文描述： | 30V的N溝道功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 145K |
| 代理商： | AAT9460 |
AAT9460
30V N-Channel Power MOSFET
2
9460.2003.10.0.63
Electrical Characteristics
(T
J
=25°C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 5 second pulse
on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. R
θ
JF
+ R
θ
FA
= R
θ
JA
where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. R
θ
JF
is guaranteed by
design; however, R
θ
FA
is determined by PCB design. Actual maximum continuous current is limited by the application’s design.
Note 2: Pulse test: Pulse width = 300 μs.
Note 3: Guaranteed by design. Not subject to production testing.
Symbol
Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250μA
30
V
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-4.5V, I
D
=3.4A
V
GS
=-2.5V, I
D
=2.8A
V
GS
=4.5V, V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=-250μA
V
GS
=±12V, V
DS
=0V
V
GS
=0V, V
DS
=30V
V
GS
=0V, V
DS
=24V, T
J
=70°C
3
V
DS
=-5V, I
D
=3.4A
46
65
58
84
m
I
D(ON)
V
GS(th)
I
GSS
On-State Drain Current
2
Gate Threshold Voltage
Gate-Body Leakage Current
8
A
V
nA
0.6
±100
1
5
I
DSS
Drain Source Leakage Current
μA
g
fs
Forward Transconductance
2
Dynamic Characteristics
3
Q
G
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
I
S
Continuous Diode Current
1
9
S
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V, R
G
=6
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V, R
G
=6
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V, R
G
=6
V
DS
=15V, R
D
=4.2
, V
GS
=4.5V, R
G
=6
5
0.9
1
6
3
30
8
nC
ns
V
GS
=0, I
S
=3.4A
1.3
1.0
V
A
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