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參數(shù)資料
| 型號(hào)： | AAT8303 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 20V P-Channel Power MOSFET |
| 中文描述： | 20V的P溝道功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 175K |
| 代理商： | AAT8303 |
Electrical Characteristics
(T
J
=25°C unless otherwise noted)
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θ
JF
+ R
θ
FA
= R
θ
JA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θ
JF
is guaranteed by design, howev-
er R
θ
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 μs
Note 3: Guaranteed by design. Not subject to production testing.
Symbol
Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250μA
-20
V
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-4.5V, I
D
=-10A
V
GS
=-2.5V, I
D
=-7.6A
V
GS
=-4.5V, V
DS
=-5V (Pulsed)
V
GS
=V
DS
, I
D
=-250μA
V
GS
=±12V, V
DS
=0V
V
GS
=0V, V
DS
=-20V
V
GS
=0V, V
DS
=-16V, T
J
=70°C
3
V
DS
=-5V, I
D
=-10A
11
18
14
24
m
I
D(ON)
V
GS(th)
I
GSS
On-State Drain Current
2
Gate Threshold Voltage
Gate-Body Leakage Current
-48
-0.6
A
V
nA
±100
-1
-5
I
DSS
Drain Source Leakage Current
μA
g
fs
Forward Transconductance
2
Dynamic Characteristics
3
Q
G
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
I
S
Continuous Diode Current
1
31
S
V
DS
=-10V, R
D
=1.0
, V
GS
=-4.5V
V
DS
=-10V, R
D
=1.0
, V
GS
=-4.5V
V
DS
=-10V, R
D
=1.0
, V
GS
=-4.5V
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0
, R
G
=6
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0
, R
G
=6
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0
, R
G
=6
V
DS
=-10V, V
GS
=-4.5V, R
D
=1.0
, R
G
=6
36
5
13
10
72
78
108
nC
ns
V
GS
=0, I
S
=-10A
-1.1
-2.3
V
A
AAT8303
20V P-Channel Power MOSFET
2
8303.2003.09.0.62
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