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參數(shù)資料
| 型號： | AAT8303 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 20V P-Channel Power MOSFET |
| 中文描述： | 20V的P溝道功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 175K |
| 代理商： | AAT8303 |
General Description
The AAT8303 is a low threshold P Channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech's proprietary ultra-
high density Trench technology, and space saving
small outline J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
Applications
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Load Switches
Features
V
DS(MAX)
= -20V
I
D(MAX)
Low R
DS(ON)
:
14 m
@ V
GS
= -4.5V
24 m
@ V
GS
= -2.5V
1
= -10A @ 25°C
TSOPJW-8 Package
D
D
D
D
S
S
S
G
Top View
1
2
3
4
8
7
6
5
AAT8303
20V P-Channel Power MOSFET
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol
Description
Typ
Max
Units
R
θ
JA
R
θ
JA2
R
θ
JF
Junction-to-Ambient steady state
1
Junction-to-Ambient t<5 seconds
1
Junction-to-Foot
1
86
44
27
105
54
32
°C/W
°C/W
°C/W
Symbol
Description
Value
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
-20
±12
±10
±8
±48
-2.3
2.3
1.5
V
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C
T
A
= 70°C
A
I
DM
I
S
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
P
D
Maximum Power Dissipation
1
T
A
= 25°C
T
A
= 70°C
W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150
°C
P
8303.2003.09.0.62
1
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