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參數(shù)資料
| 型號(hào)： | AAT7551 |
| 廠商： | Advanced Analogic Technologies, Inc. |
| 英文描述： | 20V P-Channel Power MOSFET |
| 中文描述： | 20V的P溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | AAT7551 |
Electrical Characteristics
T
J
= 25°C, unless otherwise noted.
Symbol
DC Characteristics
BV
DSS
Description
Conditions
Min
Typ
Max
Units
Drain-Source Breakdown
Voltage
V
GS
= 0V, I
D
= -250μA
-20
V
R
DS(ON)
Drain-Source On-Resistance
1
V
GS
= -4.5V, I
D
= -2.7A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= -4.5V, V
DS
= -5V (pulsed)
V
GS
= V
DS
, I
D
= -250μA
V
GS
= ±12V, V
DS
= 0V
V
GS
= 0V, V
DS
= -20V
V
GS
= 0V, V
DS
= -16V, T
J
= 70°C
2
V
DS
= -5V, I
D
= -2.7A
80
140
100
175
m
I
D(ON)
V
GS(th)
I
GSS
On-State Drain Current
1
Gate Threshold Voltage
Gate-Body Leakage Current
-8
-0.6
A
V
nA
±100
-1
-5
I
DSS
Drain Source Leakage Current
μA
g
fs
Forward Transconductance
1
Dynamic Characteristics
2
Q
G
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-On Delay
t
R
Turn-On Rise Time
t
D(OFF)
Turn-Off Delay
t
F
Turn-Off Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward
Voltage
1
I
S
Continuous Diode Current
3
4
S
V
DS
= -10V, R
D
= 3.7
, V
GS
= -4.5V
V
DS
= -10V, R
D
= 3.7
, V
GS
= -4.5V
V
DS
= -10V, R
D
= 3.7
, V
GS
= -4.5V
V
DS
= -10V, R
D
= 3.7
, V
GS
= -4.5V, R
G
= 6
V
DS
= -10V, R
D
= 3.7
, V
GS
= -4.5V, R
G
= 6
V
DS
= -10V, R
D
= 3.7
, V
GS
= -4.5V, R
G
= 6
V
DS
= -10V, R
D
= 3.7
, V
GS
= -4.5V, R
G
= 6
5.9
1
2
22
10
20
40
nC
ns
V
GS
= 0, I
S
= -2.7A
-1.3
V
-0.6
A
AAT7551
20V P-Channel Power MOSFET
2
7551.2005.04.1.0
1. Pulse test: Pulse Width = 300μs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θ
JF
+ R
θ
FA
= R
θ
JA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θ
JF
is guaranteed by design;
however, R
θ
CA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AAT7551IJS-T1 | 制造商:ANALOGICTECH 制造商全稱(chēng):Advanced Analogic Technologies 功能描述:20V P-Channel Power MOSFET |
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| AAT8107IAS-T1 | 制造商:ANALOGICTECH 制造商全稱(chēng):Advanced Analogic Technologies 功能描述:20V P-Channel Power MOSFET |
| AAT8303 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:20V P-Channel Power MOSFET |
| AAT8303_05 | 制造商:ANALOGICTECH 制造商全稱(chēng):Advanced Analogic Technologies 功能描述:20V P-Channel Power MOSFET |
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