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參數(shù)資料
| 型號(hào)： | AAT3236IJS-2.9-T1 |
| 廠商： | Advanced Analog Technology,lnc. |
| 英文描述： | 300mA CMOS High Performance LDO |
| 中文描述： | 300mA的LDO穩(wěn)壓器的CMOS高性能 |
| 文件頁數(shù)： | 12/18頁 |
| 文件大小： | 220K |
| 代理商： | AAT3236IJS-2.9-T1 |
From the discussion above, P
D(MAX)
was deter-
mined to equal 526mW at T
A
= 25°C.
Thus, the AAT3236 can sustain a constant 3V output
at a 500mA load current as long as V
IN
is
≤
4.05V at
an ambient temperature of 25°C.
Higher input-to-output voltage differentials can be
obtained with the AAT3236, while maintaining device
functions within the thermal safe operating area. To
accomplish this, the device thermal resistance must
be reduced by increasing the heat sink area or by
operating the LDO regulator in a duty-cycled mode.
For example, an application requires V
IN
= 4.2V
while V
OUT
= 3.0V at a 500mA load and T
A
= 25°C.
V
IN
is greater than 4.05V, which is the maximum
safe continuous input level for V
OUT
= 3.0V at
500mA for T
A
= 25°C. To maintain this high input
voltage and output current level, the LDO regulator
must be operated in a duty-cycled mode. Refer to
the following calculation for duty-cycle operation:
P
D(MAX)
is assumed to be 526mW.
For a 500mA output current and a 1.2 volt drop
across the AAT3236 at an ambient temperature of
25°C, the maximum on-time duty cycle for the
device would be 87.57%.
The following family of curves show the safe oper-
ating area for duty-cycled operation from ambient
room temperature to the maximum operating level.
0
0.5
1
1.5
2
2.5
3
3.5
0
10
20
30
40
50
60
70
80
90
100
Duty Cycle (%)
V
300 mA
200 mA
100 mA
500 mA
400 mA
Device Duty Cycle vs. V
DROP
(V
OUT
= 2.5V @ 85
°
°
C)
0
0.5
1
1.5
2
2.5
3
3.5
0
10
20
30
40
50
60
70
80
90
100
Duty Cycle (%)
V
500 mA
300 mA
400 mA
100 mA
200 mA
Device Duty Cycle vs. V
DROP
(V
OUT
= 2.5V @ 50
°
°
C)
Device Duty Cycle vs. V
DROP
(V
OUT
= 2.5V @ 25
°
°
C)
0
0.5
1
1.5
2
2.5
3
3.5
0
10
20
30
40
50
60
70
80
90
100
Duty Cycle (%)
V
500 mA
400 mA
300 mA
200 mA
%DC = 100
I
GND
= 150
μ
A
I
OUT
= 500mA
V
IN
= 4.2V
V
OUT
= 3.0V
%DC = 87.57%
P
D(MAX)
(V
IN
- V
OUT
)I
OUT
+ (V
IN
×
I
GND
)
%DC = 100
526mW
(4.2V - 3.0V)500mA + (4.2V
×
150
μ
A)
V
IN(MAX)
=
V
OUT
= 3.0V
I
OUT
= 500mA
I
GND
= 150
μ
A
V
IN(MAX)
= 4.05V
526mW + (3.0V
×
500mA)
500mA + 150
μ
A
AAT3236
300mA CMOS High Performance LDO
12
3236.2007.03.1.4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AAT3236IJS-3.0-T1 | 300mA CMOS High Performance LDO |
| AAT3236IJS-3.1-T1 | 300mA CMOS High Performance LDO |
| AAT3236IJS-3.3-T1 | 300mA CMOS High Performance LDO |
| AAT3236IJS-3.5-T1 | 300mA CMOS High Performance LDO |
| AAT3236IJS-3.6-T1 | 300mA CMOS High Performance LDO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AAT3236IJS-3.0-T1 | 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:300mA CMOS High Performance LDO |
| AAT3236IJS-3.1-T1 | 制造商:AAT 制造商全稱:AAT 功能描述:300mA CMOS High Performance LDO |
| AAT3236IJS-3.3-T1 | 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:300mA CMOS High Performance LDO |
| AAT3236IJS-3.5-T1 | 制造商:AAT 制造商全稱:AAT 功能描述:300mA CMOS High Performance LDO |
| AAT3236IJS-3.6-T1 | 制造商:AAT 制造商全稱:AAT 功能描述:300mA CMOS High Performance LDO |
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