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參數(shù)資料
| 型號： | AA026P2-00 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | GT 35C 35#16 SKT PLUG |
| 中文描述： | 23.5-26.5 GHz的砷化鎵單片功率放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 170K |
| 代理商： | AA026P2-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
23.5–26.5 GHz GaAs MMIC
Power Amplifier
Features
I
Single Bias Supply Operation (6 V)
I
17 dB Typical Small Signal Gain
I
24 dBm Typical P
1 dB
Output Power
at 26.5 GHz
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD
MT 2010
Chip Outline
AA026P2-00
Description
Alpha’s three-stage balanced K band GaAs MMIC power
amplifier has a typical P
1 dB
of 24 dBm and a typical P
SAT
of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven
0.25
μ
m MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate a conductive epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the commercial and military
areas where high power and gain are required.
Parameter
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
Min.
Typ.
2
520
17
-17
-20
24
26
14
17
Max.
700
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal Resistance
1
F = 23.5–26.5 GHz
F = 23.5–26.5 GHz
F = 23.5–26.5 GHz
F = 26.5 GHz
F = 26.5 GHz
F = 26.5 GHz
15
-10
-10
23
24
Electrical Specifications at 25°C (V
DS
= 6 V)
0
0.000
0
1
2
0.130
3
1.014
2.068
3.080
2.960
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
7 V
DC
22 dBm
175
°
C
Absolute Maximum Ratings
1. Calculated value based on measurement of discrete FET.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AA026P2-A4 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:20; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| AA028N1-00 | GT 14C 10#12 4#16 PIN PLUG |
| AA028N1-99 | GT 14C 10#12 4#16 SKT PLUG |
| AA028N1-A2 | 24-30 GHz Surface Mount Low Noise Amplifier |
| AA028P1-00 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:37; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AA026P2-A4 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:23.5-26.5 GHz Surface Mount Medium Power Amplifier |
| AA-027-12-22-00-00 | 功能描述:熱電組件 28.5W 3.1A 107X84mm RoHS:否 類型:Air to Air Assembly 制冷功率:58 W 最大電流:6.2 A 最大電壓:12 V 制造商:Laird Technologies / Thermal Solutions |
| AA028N1-00 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:24-30 GHz GaAs MMIC Low Noise Amplifier |
| AA028N1-99 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:23-30 GHz Low Noise Amplifier |
| AA028N1-A2 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:24-30 GHz Surface Mount Low Noise Amplifier |
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