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參數(shù)資料
| 型號(hào)： | AA028P1-00 |
| 廠商： | Alpha Industries, Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:37; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| 中文描述： | 27-29 GHz的砷化鎵單片功率放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 139K |
| 代理商： | AA028P1-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
27–29 GHz GaAs MMIC
Power Amplifier
Features
I
Single Bias Supply Operation (6 V)
I
22 dBm Typical P
1 dB
Output Power
at 28 GHz
I
13.5 dB Typical Small Signal Gain
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA028P1-00
Description
Alpha’s two-stage balanced Ka band GaAs MMIC
power amplifier has a typical P
1 dB
of 22 dBm with
12.5 dB associated gain and 10% power added efficiency
at 28 GHz. The chip uses Alpha’s proven 0.25
μ
m
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for S-parameters and power characteristics prior
to shipment for guaranteed performance. A broad range
of applications exist in both the commercial and high
reliability areas where high power and gain are required.
Parameter
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
Min.
Typ.
2
300
13.5
-13
-16
22
23
11
51
Max.
400
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal Resistance
1
F = 27–29 GHz
F = 27–29 GHz
F = 27–29 GHz
F = 28 GHz
F = 28 GHz
F = 28 GHz
11
-10
-10
21
22
Electrical Specifications at 25°C (V
DS
= 6 V)
1. Calculated value based on measurement of discrete FET.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0
0
2
3
0.329
0.086
1.371
1.700
1.613
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
7 V
DC
22 dBm
175
°
C
Absolute Maximum Ratings
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AA028P2-00 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:27-31 GHz GaAs MMIC Driver Amplifier |
| AA028P2-99 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:25-31 GHz Amplifier |
| AA028P2-A2 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:25-31 GHz Surface Mount Amplifier |
| AA028P3-00 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:27-31 GHz GaAs MMIC Driver Amplifier |
| AA0-2A | 制造商:Cooper Bussmann 功能描述:FUSE HRC 2A 制造商:Cooper Bussmann 功能描述:FUSE, HRC, 2A 制造商:Cooper Bussmann 功能描述:FUSE, HRC, 2A; Voltage Rating V AC:550V; Fuse Current:2A; HRC Fuse Case Style:Bolted Tag; Series:AAO; SVHC:No SVHC (18-Jun-2012); Approval Bodies:BS / IEC; Blow Characteristic:aM; Body Diameter:13.8mm; Breaking Capacity Current ;RoHS Compliant: Yes |
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