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參數(shù)資料
| 型號(hào)： | AA022P2-00 |
| 元件分類： | 放大器 |
| 英文描述： | 21000 MHz - 23000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 126K |
| 代理商： | AA022P2-00 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 12/99A
21–23 GHz GaAs MMIC
Medium Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 22 dBm Typical P1 dB Output Power
at 23 GHz
I 14 dB Typical Small Signal Gain
I 0.25 m Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA022P2-00
Description
Alpha’s two-stage balanced K band GaAs MMIC power
amplifier has a typical P1 dB of 22 dBm with 13 dB
associated gain guaranteed across frequency range
21–23 GHz. The chip uses Alpha’s proven 0.25
m
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance.
Parameter
Condition
Symbol
Min.
Typ.2
Max.
Unit
Drain Current (at Saturation)
IDS
280
300
mA
Small Signal Gain
F = 21–23 GHz
G
12
14
dB
Input Return Loss
F = 21–23 GHz
RLI
-8
-6
dB
Output Return Loss
F = 21–23 GHz
RLO
-9
-7
dB
Output Power at 1 dB Gain Compression
F = 23 GHz
P1 dB
19
22
dBm
Saturated Output Power
F = 23 GHz
PSAT
21
23.5
dBm
Gain at Saturation
F = 23 GHz
GSAT
11
dB
Thermal Resistance1
ΘJC
69
°C/W
Electrical Specifications at 25°C (VDS = 6 V)
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.571
3.268
1.576
3.400
0.000
1.572
1.700
0.850
0.000
RF OUT
RF IN
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
19 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
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