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參數(shù)資料
| 型號(hào)： | AA035N2-00 |
| 元件分類： | 放大器 |
| 英文描述： | 28000 MHz - 36000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | CHIP |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 173K |
| 代理商： | AA035N2-00 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 7/00A
28–36 GHz GaAs MMIC
Low Noise Amplifier
Features
s Dual Bias Supply Operation (4.5 V)
s 2.8 dB Typical Noise Figure at 32 GHz
s 12 dB Typical Small Signal Gain
s 0.25
m Ti/Pd/Au Gates
s 100% On-Wafer RF, DC and Noise Figure
Testing
s 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA035N1-00, AA035N2-00
Description
Alpha’s two-stage balanced 28–36 GHz MMIC low noise
amplifier has typical small signal gain of 12 dB with a
typical noise figure of 2.6 dB at 32 GHz. The chip uses
Alpha’s proven 0.25
m low noise PHEMT technology, and
is based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate a conductive epoxy die
attach process.
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current
IDS
70
90
mA
Small Signal Gain
F = 28–36 GHz
G
10
12
dB
Noise Figure
F = 32 GHz
NF
2.8
3.2
dB
Input Return Loss
F = 28–36 GHz
RLI
-17
-12
dB
Output Return Loss
F = 28–36 GHz
RLO
-20
-12
dB
Output Power at 1 dB Gain Compression1
F = 35 GHz
P1 dB
10
dBm
Thermal Resistance2
ΘJC
50
°C/W
AA035N1-00 Electrical Specifications at 25°C (VDS = 4.5 V, ID = 70 mA)
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current
IDS
70
90
mA
Small Signal Gain
F = 28–36 GHz
G
9
12
dB
Noise Figure
F = 32 GHz
NF
3.0
3.8
dB
Input Return Loss
F = 28–36 GHz
RLI
-17
-12
dB
Output Return Loss
F = 28–36 GHz
RLO
-20
-12
dB
Output Power at 1 dB Gain Compression1
F = 35 GHz
P1 dB
10
dBm
Thermal Resistance2
ΘJC
50
°C/W
AA035N2-00 Electrical Specifications at 25°C (VDS = 4.5 V, ID = 70 mA)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
0.269
0.000
0.116
0.627
0.985
1.343
1.701
2.059
2.417
2.690
1.598
2.370
2.255
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
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