參數(shù)資料
型號(hào): AA022P1-00
廠商: Alpha Industries, Inc.
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum; Series:GT; No. of Contacts:26; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
中文描述: 18-23 GHz的砷化鎵單片功率放大器
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 139K
代理商: AA022P1-00
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
18–23 GHz GaAs MMIC
Power Amplifier
Features
I
Single Bias Supply Operation (6 V)
I
14 dB Typical Small Signal Gain
I
24.5 dBm Typical P
1 dB
Output Power
at 23 GHz
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA022P1-00
Description
Alpha’s two-stage balanced K band GaAs MMIC power
amplifier has a typical P
1 dB
of 24.5 dBm with 13 dB
associated gain and 11% power added efficiency at
23 GHz.The chip uses Alpha’s proven 0.25
μ
m MESFET
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for small signal S-parameters and power
characteristics prior to shipment for guaranteed
performance.A broad range of applications exist in both
the high reliability and commercial areas where high power
and gain are required.
Parameter
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
Min.
Typ.
2
300
14
-15
-17
24.5
25.5
13
39
Max.
390
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal Resistance
1
F = 18–23 GHz
F = 18–23 GHz
F = 18–23 GHz
F = 23 GHz
F = 23 GHz
F = 23 GHz
12
-10
-10
22
24
Electrical Specifications at 25°C (V
DS
= 6 V)
1. Calculated value based on measurement of discrete FET.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0
0
0.086
1.700
2
0.329
3
1.613
1.371
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
7 V
DC
22 dBm
175
°
C
Absolute Maximum Ratings
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