參數(shù)資料
型號(hào): A81L801UG-70I
廠商: AMIC Technology Corporation
英文描述: Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
中文描述: 堆疊式多芯片封裝(MCP)1的MX 8位/ 16位為512k ×引導(dǎo)扇區(qū)閃存和128K × 8 SRAM的低電壓的CMOS
文件頁(yè)數(shù): 43/47頁(yè)
文件大?。?/td> 705K
代理商: A81L801UG-70I
A81L801
PRELIMINARY (March, 2005, Version 0.0)
42
AMIC Technology, Corp.
Timing Waveforms (continued)
Write Cycle 2
(Chip Enable Controlled)
t
WC
Address
CE_S
D
IN
t
DH
t
DW
(4)
t
CW5
t
AW
t
WR3
WE
D
OUT
t
WHZ7
t
CW5
t
AS1
Notes: 1. t
AS
is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (t
WP
) of a low
CE_S
, and a low WE .
3. t
WR
is measured from the earliest of
CE_S
or WE going high going low to the end of the Write cycle.
4. If
the
CE_S
low
transition
occurs
the WE transition, outputs remain in a high impedance state.
5. t
CW
is measured from the later of
CE_S
going low going high to the end of Write.
6. OE is continuously low. ( OE = V
IL
)
7. Transition is measured
±
500mV from steady state. This parameter is sampled and not 100% tested.
simultaneously
with
the
WE
low
transition
or
after
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