參數(shù)資料
型號: A81L801UG-70I
廠商: AMIC Technology Corporation
英文描述: Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
中文描述: 堆疊式多芯片封裝(MCP)1的MX 8位/ 16位為512k ×引導(dǎo)扇區(qū)閃存和128K × 8 SRAM的低電壓的CMOS
文件頁數(shù): 38/47頁
文件大?。?/td> 705K
代理商: A81L801UG-70I
A81L801
PRELIMINARY (March, 2005, Version 0.0)
37
AMIC Technology, Corp.
Timing Waveforms for Alternate
CE_F
Controlled Write Operation
Addresses
WE
OE
CE_F
Data
555 for program
2AA for erase
PA
D
OUT
~
~
I/O
7
~
~
~
Data Polling
Note :
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O
7
= Complement of Data Input, D
OUT
= Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
PD for program
30 for sector erase
10 for chip erase
~
t
BUSY
t
WHWH1 or 2
t
AH
t
AS
t
WC
t
WH
t
CP
t
WS
t
CPH
PA for program
SA for sector erase
555 for chip erase
A0 for program
55 for erase
t
RH
t
DS
t
DH
~
~
RESET
RY/BY
Erase and Programming Performance
Parameter
Typ. (Note 1)
1.0
35
35
12
11
Max. (Note 2)
8
Unit
sec
sec
μ
s
μ
s
sec
Comments
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Excludes 00h programming
prior to erasure
300
500
33
Byte Mode
Chip Programming Time
(Note 3)
Word Mode
7.2
21.6
sec
Excludes system-level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0V VCC_F, 10,000 cycles. Additionally, programming
typically assumes checkerboard pattern.
2. Under worst case conditions of 90
°
C, VCC_F = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does
the device set I/O
5
= 1. See the section on I/O
5
for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 5 for
further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 10,000 cycles.
相關(guān)PDF資料
PDF描述
A81L801UG-70IF Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
A8205SLH-XX LOW-DROPOUT REGULATORS - HIGH EFFICIENCY
A8205SLH LOW-DROPOUT REGULATORS . HIGH EFFICIENCY
A8228SLM LOW-DROPOUT REGULATORS . HIGH EFFICIENCY
A8232SLM LOW-DROPOUT REGULATORS . HIGH EFFICIENCY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A81L801UG-70IF 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
A-81X 制造商:Triad Magnetics 功能描述:
A82 功能描述:射頻放大器 10-300MHz NF 2.8dB VSWR:1.3:1 RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
A8-2 制造商:Raaco 功能描述:Bulk
A82_1 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Cascadable Amplifier 20 to 250 MHz