參數(shù)資料
型號： A43L4616
廠商： AMIC Technology Corporation
英文描述： 4M X 16 Bit X 4 Banks Synchronous DRAM
中文描述： 4米× 16位× 4個銀行同步DRAM
文件頁數(shù)： 16/41頁
文件大?。?/td> 1063K
代理商： A43L4616
A43L4616
(September, 2004, Version 0.0)
15
AMIC Technology, Corp.
3. CAS Interrupt (I)
Note : 1. By “Interrupt”, It is possible to stop burst read/write by external command before the end of burst.
By “
CAS
Interrupt”, to stop burst read/write by
CAS
access; read, write and block write.
2. t
CCD
:
CAS
to
CAS
delay. (=1CLK)
3. t
CDL
: Last data in to new column address delay. (= 1CLK).
1) Read interrupted by Read (BL=4)
Note 1
RD
RD
A
B
QA0
QB0
QB1
QB2
QB3
QA0
QB0
QB1
QB2
QB3
CLK
CMD
ADD
DQ(CL2)
DQ(CL3)
CCD
Note2
2) Write interrupted by Write (BL =2)
WR
WR
A
B
CLK
CMD
ADD
t
CCD
Note2
DA0
DB0
DB1
t
CDL
Note3
DQ
3) Write interrupted by Read (BL =2)
WR
RD
A
B
t
CCD
Note2
DA0
QB0
QB1
CDL
Note3
DQ(CL2)
QB0
QB1
DQ(CL3)
DA0
相關(guān)PDF資料
PDF描述
A43L4616V-7 4M X 16 Bit X 4 Banks Synchronous DRAM
A43L8316AV-5 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316AV-5.5 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316AV-6 128K X 16 Bit X 2 Banks Synchronous DRAM
A43L8316AV-7 128K X 16 Bit X 2 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A43L4616AV-7F 制造商:AMIC Technology 功能描述:MEMORY SDRAM 256M 54TSOP 制造商:AMIC Technology 功能描述:MEMORY, SDRAM, 256M, 54TSOP 制造商:AMIC Technology 功能描述:MEMORY, SDRAM, 256M, 54TSOP; Memory Type:DRAM - Synchronous; Memory Configuration:16M x 16bit; Access Time:5.4ns; Memory Case Style:TSOPII; No. of Pins:54; Interface Type:LVTTL; Operating Temperature Min:0C; Operating Temperature ;RoHS Compliant: Yes 制造商:AMIC Technology 功能描述:DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSSOP-II
A43L4616G-75I 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
A43L4616G-95I 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
A43L4616V-7 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:4M X 16 Bit X 4 Banks Synchronous DRAM
A43L4616V-75I 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
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