Revision 11 2-9 Power Calculation Methodology This section describes a simplified method to estimate power consumption o" />
參數(shù)資料
型號(hào): A3PN125-ZVQ100
廠(chǎng)商: Microsemi SoC
文件頁(yè)數(shù): 31/114頁(yè)
文件大?。?/td> 0K
描述: IC FPGA NANO 125K GATES 100-VQFP
標(biāo)準(zhǔn)包裝: 90
系列: ProASIC3 nano
RAM 位總計(jì): 36864
輸入/輸出數(shù): 71
門(mén)數(shù): 125000
電源電壓: 1.425 V ~ 1.575 V
安裝類(lèi)型: 表面貼裝
工作溫度: 0°C ~ 70°C
封裝/外殼: 100-TQFP
供應(yīng)商設(shè)備封裝: 100-VQFP(14x14)
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)當(dāng)前第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)
ProASIC3 nano Flash FPGAs
Revision 11
2-9
Power Calculation Methodology
This section describes a simplified method to estimate power consumption of an application. For more
accurate and detailed power estimations, use the SmartPower tool in Libero SoC.
The power calculation methodology described below uses the following variables:
The number of PLLs as well as the number and the frequency of each output clock generated
The number of combinatorial and sequential cells used in the design
The internal clock frequencies
The number and the standard of I/O pins used in the design
The number of RAM blocks used in the design
Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 2-12 on
Enable rates of output buffers—guidelines are provided for typical applications in Table 2-13 on
Read rate and write rate to the memory—guidelines are provided for typical applications in
Table 2-13 on page 2-11. The calculation should be repeated for each clock domain defined in the
design.
Methodology
Total Power Consumption—PTOTAL
PTOTAL = PSTAT + PDYN
PSTAT is the total static power consumption.
PDYN is the total dynamic power consumption.
Total Static Power Consumption—PSTAT
PSTAT = PDC1 + NINPUTS* PDC2 + NOUTPUTS* PDC3
NINPUTS is the number of I/O input buffers used in the design.
NOUTPUTS is the number of I/O output buffers used in the design.
Total Dynamic Power Consumption—PDYN
PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL
Global Clock Contribution—PCLOCK
PCLOCK = (PAC1 + NSPINE*PAC2 + NROW*PAC3 + NS-CELL* PAC4) * FCLK
NSPINE is the number of global spines used in the user design—guidelines are provided in the "Spine
Architecture" section of the Global Resources chapter in the ProASIC3 nano FPGA Fabric User's
NROW is the number of VersaTile rows used in the design—guidelines are provided in the "Spine
Architecture" section of the Global Resources chapter in the ProASIC3 nano FPGA Fabric User's
FCLK is the global clock signal frequency.
NS-CELL is the number of VersaTiles used as sequential modules in the design.
PAC1, PAC2, PAC3, and PAC4 are device-dependent.
Sequential Cells Contribution—PS-CELL
PS-CELL = NS-CELL * (PAC5 + 1 / 2 * PAC6) * FCLK
NS-CELL is the number of VersaTiles used as sequential modules in the design. When a multi-tile
sequential cell is used, it should be accounted for as 1.
1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-12 on page 2-11.
FCLK is the global clock signal frequency.
相關(guān)PDF資料
PDF描述
A3PN125-ZVQG100 IC FPGA NANO 125K GATES 100-VQFP
AGLN060V5-VQ100 IC FPGA NANO 1KB 60K 100VQFP
HCC65DRXI-S734 CONN EDGECARD 130PS DIP .100 SLD
ESC65DRYS CONN EDGECARD 130PS DIP .100 SLD
ACC49DREN CONN EDGECARD 98POS .100 EYELET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A3PN125-ZVQ100I 功能描述:IC FPGA NANO 125K GATES 100-VQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN125-ZVQG100 功能描述:IC FPGA NANO 125K GATES 100-VQFP RoHS:是 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN125-ZVQG100I 功能描述:IC FPGA NANO 125K GATES 100-VQFP RoHS:是 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN250-1VQ100 功能描述:IC FPGA NANO 250K GATES 100-VQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN250-1VQ100I 功能描述:IC FPGA NANO 250K GATES 100-VQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門(mén)陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門(mén)數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類(lèi)型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)