Revision 11 2-3 I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial)
參數(shù)資料
型號(hào): A3PN020-1QNG68I
廠商: Microsemi SoC
文件頁(yè)數(shù): 24/114頁(yè)
文件大小: 0K
描述: IC FPGA NANO 20K GATES 68-QFN
標(biāo)準(zhǔn)包裝: 260
系列: ProASIC3 nano
輸入/輸出數(shù): 49
門數(shù): 20000
電源電壓: 1.425 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: -40°C ~ 85°C
封裝/外殼: 68-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 68-QFN(8x8)
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)當(dāng)前第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)
ProASIC3 nano Flash FPGAs
Revision 11
2-3
I/O Power-Up and Supply Voltage Thresholds for Power-On Reset
(Commercial and Industrial)
Sophisticated power-up management circuitry is designed into every ProASIC3 device. These circuits
ensure easy transition from the powered-off state to the powered-up state of the device. The many
different supplies can power up in any sequence with minimized current spikes or surges. In addition, the
I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1
There are five regions to consider during power-up.
ProASIC3 I/Os are activated only if ALL of the following three conditions are met:
1. VCC and VCCI are above the minimum specified trip points (Figure 2-1 on page 2-4).
2. VCCI > VCC – 0.75 V (typical)
3. Chip is in the operating mode.
VCCI Trip Point:
Ramping up: 0.6 V < trip_point_up < 1.2 V
Ramping down: 0.5 V < trip_point_down < 1.1 V
VCC Trip Point:
Ramping up: 0.6 V < trip_point_up < 1.1 V
Ramping down: 0.5 V < trip_point_down < 1 V
VCC and VCCI ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically
built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following:
During programming, I/Os become tristated and weakly pulled up to VCCI.
JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O
behavior.
PLL Behavior at Brownout Condition
Microsemi recommends using monotonic power supplies or voltage regulators to ensure proper power-
up behavior. Power ramp-up should be monotonic at least until VCC and VCCPLLX exceed brownout
activation levels. The VCC activation level is specified as 1.1 V worst-case (see Figure 2-1 on page 2-4
for more details).
When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ±
0.25 V), the PLL output lock signal goes low and/or the output clock is lost. Refer to the
"Power-Up/-Down Behavior of Low Power Flash Devices" chapter of the ProASIC3 nano FPGA Fabric
User’s Guide for information on clock and lock recovery.
Table 2-4 Overshoot and Undershoot Limits 1
VCCI and VMV
Average VCCI–GND Overshoot or Undershoot
Duration as a Percentage of Clock Cycle 2
Maximum Overshoot/
Undershoot 2
2.7 V or less
10%
1.4 V
5%
1.49 V
3 V
10%
1.1 V
5%
1.19 V
3.3 V
10%
0.79 V
5%
0.88 V
3.6 V
10%
0.45 V
5%
0.54 V
Notes:
1. Based on reliability requirements at 85°C.
2. The duration is allowed at one out of six clock cycles. If the overshoot/undershoot occurs at one out of two cycles, the
maximum overshoot/undershoot has to be reduced by 0.15 V.
相關(guān)PDF資料
PDF描述
A3PN030-ZQNG48I IC FPGA NANO 30K GATES 48-QFN
AGLN030V2-ZQNG68 IC FPGA NANO 1KB 30K 68-QFN
BR24T02NUX-WTR IC EEPROM I2C 2K 400KHZ 8-VSON
A3P030-2QNG68 IC FPGA 1KB FLASH 30K 68-QFN
A3PN015-1QNG68I IC FPGA NANO 15K GATES 68-QFN
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A3PN020-2QNG68 功能描述:IC FPGA NANO 20K GATES 68-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN020-2QNG68I 功能描述:IC FPGA NANO 20K GATES 68-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN020-QNG68 功能描述:IC FPGA NANO 172MAC 68QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:60 系列:XP LAB/CLB數(shù):- 邏輯元件/單元數(shù):10000 RAM 位總計(jì):221184 輸入/輸出數(shù):244 門數(shù):- 電源電壓:1.71 V ~ 3.465 V 安裝類型:表面貼裝 工作溫度:0°C ~ 85°C 封裝/外殼:388-BBGA 供應(yīng)商設(shè)備封裝:388-FPBGA(23x23) 其它名稱:220-1241
A3PN020-QNG68I 功能描述:IC FPGA NANO 20K GATES 68-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - FPGA(現(xiàn)場(chǎng)可編程門陣列) 系列:ProASIC3 nano 標(biāo)準(zhǔn)包裝:152 系列:IGLOO PLUS LAB/CLB數(shù):- 邏輯元件/單元數(shù):792 RAM 位總計(jì):- 輸入/輸出數(shù):120 門數(shù):30000 電源電壓:1.14 V ~ 1.575 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 85°C 封裝/外殼:289-TFBGA,CSBGA 供應(yīng)商設(shè)備封裝:289-CSP(14x14)
A3PN030-VQG100 制造商:Microsemi Corporation 功能描述:FPGA PROASIC3 NANO 30K GATES 130NM 1.5V - Trays