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參數(shù)資料
| 型號： | A28F010 |
| 廠商： | Intel Corp. |
| 英文描述： | 1024K (128K x 8) CMOS Flash Memory(1024K (128K x 8) CMOS閃速存儲器) |
| 中文描述： | 1024K（128K的× 8）的CMOS閃存（1024K（128K的× 8）的CMOS閃速存儲器） |
| 文件頁數(shù)： | 1/23頁 |
| 文件大小： | 284K |
| 代理商： | A28F010 |
*
Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 290266-004
A28F010
1024K (128K x 8) CMOS FLASH MEMORY
(Automotive)
Y
Automotive Temperature Range:
b
40
§
C to
a
125
§
C
Y
Flash Memory Electrical Chip-Erase
D 1 Second Typical Chip-Erase
Y
Quick-Pulse Programming Algorithm
D 10
m
s Typical Byte-Program
D 2 Second Chip-Program
Y
1,000 Erase/Program Cycles Minimum
over Automotive Temperature Range
Y
12.0V
g
5% V
PP
Y
High-Performance Read
D 120 ns Maximum Access Time
Y
CMOS Low Power Consumption
D 30 mA Maximum Active Current
D 300
m
A Maximum Standby Current
Y
Integrated Program/Erase Stop Timer
Y
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Y
Noise Immunity Features
D
g
10% V
CC
Tolerance
D Maximum Latch-Up Immunity
through EPI Processing
Y
ETOX
TM
III Flash Nonvolatile Memory
Technology
D EPROM-Compatible Process Base
D High-Volume Manufacturing
Experience
Y
JEDEC-Standard Pinouts
D 32-Pin Plastic DIP
D 32-Lead PLCC
(See Packaging Spec., Order
Y
231369)
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases
memory flexibility, while contributing to time- and cost-savings.
The 28F010 is a 1024-kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel’s 28F010 is
offered in 32-pin Plastic DIP or 32-lead PLCC packages. Pin assignments conform to JEDEC standards.
Extended erase and program cycling capability is designed into Intel’s ETOX
TM
III (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0V V
PP
supply, the
28F010 performs a minimum of 1,000 erase and program cycles well within the time limits of the Quick-Pulse
Programming and Quick-Erase algorithms.
Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds, low
power consumption, and immunity to noise. Its 120 nanosecond access time provides no-WAIT-state perform-
ance for a wide range of microprocessors and microcontrollers. Maximum standby current of 300
m
A trans-
lates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
on address and data pins, from
b
1V to V
CC
a
1V.
With Intel’s ETOX III process base, the 28F010 leverages years of EPROM experience to yield the highest
levels of quality, reliability, and cost-effectiveness.
In order to meet the rigorous environmental requirements of automotive applications, Intel offers the 28F010 in
extended automotive temperature range. Read and write characteristics are guaranteed over the range of
b
40
§
C to
a
125
§
C ambient.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A28F200BR-B | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲器) |
| A28F200BR-T | 2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲器) |
| A28F200BX-B | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲器) |
| A28F400BR-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲器) |
| A28F400BR-T | 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引導(dǎo)塊閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A28F200BR-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BR-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BR-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BR-T/B |
| A28F200BR-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
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