參數(shù)資料
型號: A160CT15VD
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位),1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù): 46/52頁
文件大?。?/td> 614K
代理商: A160CT15VD
44
Am29SL160C
21635C5 January23,2007
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See
“Erase And Programming Performance” on page 46
for more information.
Parameter
Speed Options
JEDEC
Std.
Description
-100
-120
-150
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
120
150
ns
t
AVEL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
50
60
70
ns
t
DVEH
t
DS
Data Setup Time
Min
50
60
70
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
50
60
70
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation
(Notes 1, 2)
Byte
Typ
10
μs
Word
Typ
12
Accelerated Program Operation, Byte or Word
(Note 2)
Typ
8
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec
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A160CT15VF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT15VI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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