參數(shù)資料
型號： A160CT15VD
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述： 16兆位（2米× 8位/ 1個M x 16位），1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù)： 22/52頁
文件大?。?/td> 614K
代理商： A160CT15VD
20
Am29SL160C
21635C5 January23,2007
D A T A S H E E T
Table 9.
System Interface String
Table 10.
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0018h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0022h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N
μs
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
44h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0000h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0015h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of bytes in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
001Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
相關(guān)PDF資料
PDF描述
A160CT15VF 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT15VI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CB10VC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CB10VD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CB10VF 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A160CT15VF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT15VI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A-160-HG 制造商:Master Appliance Corp 功能描述:Shrink Attachment, 3/4 in. Outer Dia. (Max.), 3/4 in. Diameter, Recovered Outer 制造商:Master Appliance Corp 功能描述:HEAT SHRINK ATTACHMENT, For Use With:HG & VT Model Heat Guns, Tip / Nozzle Style:Hook, Leaded Process Compatible:No, Peak Reflow Compatible (260 C):No , RoHS Compliant: No 制造商:Master Appliance Corp 功能描述:Attachment, Shrink Tubing Up To 3/4" O.D.
A1-60PA-2.54DS 制造商:HRS 制造商全稱:HRS 功能描述:2.54mm Pitch High Density Connector
A1-60PA-2.54DS(71) 功能描述:集管和線殼 60P M PIN HEADER DR R/A TYPE GOLD PLATED RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點(diǎn)類型:Pin (Male) 節(jié)距:1 mm 位置/觸點(diǎn)數(shù)量:16 排數(shù):1 安裝風(fēng)格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點(diǎn)材料:Brass 觸點(diǎn)電鍍:Gold 制造商:Hirose Connector
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