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參數(shù)資料
| 型號： | 9Q512K32 |
| 廠商： | Aeroflex Inc. |
| 英文描述： | UT9Q512K32 16Megabit SRAM MCM |
| 中文描述： | UT9Q512K32 16Megabit的SRAM億立方米 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 9Q512K32 |
8
AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)*
(-40
°
C to +125
°
C) (V
DD
= 5.0V + 10%)
Notes
:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019.
1. Functional test performed with outputs disabled (G high).
2. Three-state is defined as 500mV change from steady-state output voltage.
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
AVAV
1
Write cycle time
25
ns
t
ETWH
Device Enable to end of write
20
ns
t
AVET
Address setup time for write (En - controlled)
1
ns
t
AVWL
Address setup time for write (Wn - controlled)
0
ns
t
WLWH
Write pulse width
20
ns
t
WHAX
Address hold time for write (Wn - controlled)
0
ns
t
EFAX
Address hold time for Device Enable (En - controlled)
0
ns
t
WLQZ
2
Wn - controlled three-state time
10
ns
t
WHQX
2
Wn - controlled Output Enable time
5
ns
t
ETEF
Device Enable pulse width (En - controlled)
20
ns
t
DVWH
Data setup time
15
ns
t
WHDX
Data hold time
0
ns
t
WLEF
Device Enable controlled write pulse width
20
ns
t
DVEF
Data setup time
15
ns
t
EFDX
Data hold time
0
ns
t
AVWH
Address valid to end of write
20
ns
t
WHWL1
Write disable time
5
ns
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