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參數(shù)資料
| 型號： | 9Q512K32 |
| 廠商： | Aeroflex Inc. |
| 英文描述： | UT9Q512K32 16Megabit SRAM MCM |
| 中文描述： | UT9Q512K32 16Megabit的SRAM億立方米 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 9Q512K32 |
11
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(1 Second Data retention Test)
SYMBOL
Notes:
1. En =
V
DD
- .2V, all other inputs = V
DR
or V
SS
.
2. Data retention current (I
DDR
) Tc = 25
o
C.
3. Not guaranteed or tested.
4. V
DR
= T=-40
o
C and 125
o
C.
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(10 Second Data Retention Test, T
C
=-40
o
C and +125
o
C)
SYMBOL
Notes:
1. Performed at V
DD
(min) and V
DD
(max).
2. En =
V
SS
, all other inputs = V
DR
or V
SS
.
3. Not guaranteed or tested.
PARAMETER
MINIMUM
MAXIMUM
UNIT
V
DR
V
DD
for data retention
2.5
--
V
I
DDR
1,2
Data retention current (per byte)
--
5.0
mA
t
EFR
1,3
Chip deselect to data retention time
0
ns
t
R1,3
Operation recovery time
t
AVAV
Ns
PARAMETER
MINIMUM
MAXIMUM
UNIT
V
DD
1
V
DD
for data retention
4.5
5.5
V
t
EFR
2, 3
Chip select to data retention time
0
ns
t
R2, 3
Operation recovery time
t
AVAV
ns
V
DD
DATA RETENTION MODE
t
R
4.5V
4.5V
V
DR
>
2.5V
Figure 7. Low V
DD
Data Retention Waveform
t
EFR
E1
V
DD
= V
DR
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參數(shù)描述 |
|---|---|
| 9QA0-111-11-3.50 | 制造商:3M Electronic Products Division 功能描述:CABLE ASSY - Bulk |
| 9QA0-111-12-0.50 | 制造商:3M Electronic Products Division 功能描述:CABLE TWIN AXIAL 30AWG .5M 制造商:3M Electronic Products Division 功能描述:80001390170 |
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| 9QA0-111-12-2.00 | 制造商:3M Electronic Products Division 功能描述:CABLE TWIN AXIAL 30AWG 2M 制造商:3M Electronic Products Division 功能描述:80001390196 |
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