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參數(shù)資料
| 型號(hào)： | 97A8 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-226AA |
| 封裝： | LEAD FREE, PLASTIC, TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 146K |
| 代理商： | 97A8 |
RATING AND CHARACTERISTIC CURVES
97A8
Characteristic
Symbol
Value
Unit
Thermal Resistance - Junction to Lead
- Junction to Case
- Junction to Ambient
RthJL
RthJC
RthJA
60
75
150
/
℃ W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
TL
260
℃
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Reptitive Forward or Reverse Blocking Current
Tj =25℃
(VD=Rated VDRM and VRRM; Gate OPen)
Tj =110℃
IDRM
IRRM
----
10
100
uA
Peak Forward On-State Voltage
(ITM=± 1A Peak @Tp
2.0 ms, Duty Cycle
2%)
≦
VTM
----
1.9
Volts
Gate Trigger Current (VD = 12 Vdc; RL = 100 Ohms)
IGT1
IGT2
IGT3
IGT4
----
5.0
7.0
mA
Holding Current (VD = 12 V, Initiating Current = ± 200 mA, Gate
Open)
IH
----
1.5
10
mA
Turn-On Time (VD = Rated VDRM , ITM = 1.0 A pk, IG = 25 mA)
tgt
----
2
----
us
Gate Trigger Voltage (VD = 12 Vdc; RL =100 Ohms)
VGT1
VGT2
VGT3
VGT4
----
0.66
0.77
0.84
0.88
2.0
2.5
Volts
Latching Current (VD=12V,IG= 10 mA)
IL1
IL2
IL3
IL4
----
1.6
10.5
1.5
2.5
15
20
15
mA
Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 ℃)
VGD
0.1
----
Volts
Critical Rate of Rise of Off-State Voltage
(VD=Rated VDRM,Exponential Waveform, Gate Open, TJ=110 )
℃
dv/dt
20
60
----
V/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tc=25
unless otherwise noted)
℃
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
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