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參數(shù)資料
| 型號(hào)： | 97A8 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-226AA |
| 封裝： | LEAD FREE, PLASTIC, TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 146K |
| 代理商： | 97A8 |
97A8
MAXIMUM RATINGS (Tj= 25
unless otherwise noticed)
℃
FEATURES
One-Piece, Injection-Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes
(Quadrants) for all possible Combinations of Trigger
Sources, and especially for Circuits that Source Gate
Drives
All Diffused and Glassivated Junctions for Maximum
Uniformity of Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/msec
at 110 )
℃
Pb-Free Package
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
TRIACs
0.8AMPERES RMS
600 VOLTS
Rating
Symbol
Value
Unit
Peak Repetitive Off– State Voltage (
TJ= -40 to 125℃, Sine Wave, 50 to 60 Hz; Gate Open)
VDRM,
VRRM
600
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (
TC = 50℃)
IT(RMS)
0.8
Amp
Peak Non-Repetitive Surge Current
Full Cycle Sine Wave 60 Hz (Tj =25℃)
ITSM
9.0
Amps
Circuit Fusing Consideration (t = 8.3 ms)
I t
0.34
A s
Peak Gate Power ( t
2.0us ,Tc = 80
≦
℃
)
PGM
5.0
Watt
Average Gate Power (
Tc = 80
, t
8.3 ms )
℃
≦
PG(AV)
0.1
Watt
Peak Gate Current ( t
2.0us ,Tc = 80
≦
℃
)
IGM
1.0
Amp
Peak Gate Voltage ( t
2.0us ,Tc = 80
≦
℃
)
VGM
5.0
Volts
Operating Junction Temperature Range
TJ
-40 to +110
℃
Storage Temperature Range
Tstg
-40 to +150
℃
2
REV. 2, Oct-2010, KTXD23
Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TO-92 (TO-226AA)
All Dimensions in millimeter
TO-92
DIM.
MIN.
MAX.
A
C
D
E
F
G
B
4.45
4.70
5.33
4.32
3.18
4.19
1.39
1.15
2.42
2.66
12.7
------
2.04
2.66
3.43
I
-----
SEMICONDUCTOR
LITE-ON
1
Main Terminal 1
2
Gate
3
Main Terminal 2
PIN A SSIGNMENT
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