參數(shù)資料
型號: 93C56AESN
廠商: Microchip Technology Inc.
英文描述: IGBT Module; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
中文描述: 汽車溫度2K 5.0V Microwire串行EEPROM的
文件頁數(shù): 7/24頁
文件大小: 405K
代理商: 93C56AESN
2003 Microchip Technology Inc.
DS21794B-page 15
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
B1
B
A1
A
L
A2
p
α
E
eB
β
c
E1
n
D
1
2
Units
INCHES*
MILLIMETERS
Dimension Limits
MIN
NOM
MAX
MIN
NOM
MAX
Number of Pins
n
88
Pitch
p
.100
2.54
Top to Seating Plane
A
.140
.155
.170
3.56
3.94
4.32
Molded Package Thickness
A2
.115
.130
.145
2.92
3.30
3.68
Base to Seating Plane
A1
.015
0.38
Shoulder to Shoulder Width
E
.300
.313
.325
7.62
7.94
8.26
Molded Package Width
E1
.240
.250
.260
6.10
6.35
6.60
Overall Length
D
.360
.373
.385
9.14
9.46
9.78
Tip to Seating Plane
L
.125
.130
.135
3.18
3.30
3.43
Lead Thickness
c
.008
.012
.015
0.20
0.29
0.38
Upper Lead Width
B1
.045
.058
.070
1.14
1.46
1.78
Lower Lead Width
B
.014
.018
.022
0.36
0.46
0.56
Overall Row Spacing
§
eB
.310
.370
.430
7.87
9.40
10.92
Mold Draft Angle Top
α
510
15
5
10
15
Mold Draft Angle Bottom
β
510
15
5
10
15
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
JEDEC Equivalent: MS-001
Drawing No. C04-018
.010” (0.254mm) per side.
§ Significant Characteristic
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