參數(shù)資料
型號: 93C56AESN
廠商: Microchip Technology Inc.
英文描述: IGBT Module; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
中文描述: 汽車溫度2K 5.0V Microwire串行EEPROM的
文件頁數(shù): 6/24頁
文件大?。?/td> 405K
代理商: 93C56AESN
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
DS21794B-page 14
2003 Microchip Technology Inc.
6-Lead Plastic Small Outline Transistor (OT) (SOT-23)
10
5
0
10
5
0
β
Mold Draft Angle Bottom
10
5
0
10
5
0
α
Mold Draft Angle Top
0.50
0.43
0.35
.020
.017
.014
B
Lead Width
0.20
0.15
0.09
.008
.006
.004
c
Lead Thickness
10
5
0
10
5
0
φ
Foot Angle
0.55
0.45
0.35
.022
.018
.014
L
Foot Length
3.10
2.95
2.80
.122
.116
.110
D
Overall Length
1.75
1.63
1.50
.069
.064
.059
E1
Molded Package Width
3.00
2.80
2.60
.118
.110
.102
E
Overall Width
0.15
0.08
0.00
.006
.003
.000
A1
Standoff
1.30
1.10
0.90
.051
.043
.035
A2
Molded Package Thickness
1.45
1.18
0.90
.057
.046
.035
A
Overall Height
1.90
.075
p1
Outside lead pitch (basic)
0.95
.038
p
Pitch
6
n
Number of Pins
MAX
NOM
MIN
MAX
NOM
MIN
Dimension Limits
MILLIMETERS
INCHES*
Units
1
D
B
n
E
E1
L
c
β
φ
α
A2
A
A1
p1
exceed .005" (0.127mm) per side.
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
Notes:
JEITA (formerly EIAJ) equivalent: SC-74A
Drawing No. C04-120
*Controlling Parameter
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