- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄352374 > 93C56A (Microchip Technology Inc.) IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No PDF資料下載
參數(shù)資料
| 型號： | 93C56A |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No |
| 中文描述： | 汽車溫度2K 5.0V Microwire串行EEPROM的 |
| 文件頁數(shù)： | 23/24頁 |
| 文件大?。?/td> | 405K |
| 代理商： | 93C56A |
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
DS21794B-page 8
2003 Microchip Technology Inc.
2.6
ERASE/WRITE DISABLE And ENABLE (EWDS/EWEN)
The 93XX56A/B/C powers up in the ERASE/WRITE
Disable (EWDS) state. All Programming modes must be
preceded by an ERASE/WRITE Enable (EWEN) instruc-
tion. Once the EWEN instruction is executed, program-
ming remains enabled until an EWDS instruction is
executed or Vcc is removed from the device.
To protect against accidental data disturbance, the
EWDS
instruction can be used to disable all ERASE/
WRITE functions and should follow all programming
operations. Execution of a READ instruction is indepen-
dent of both the EWEN and EWDS instructions.
FIGURE 2-5:
EWDS TIMING
FIGURE 2-6:
EWEN TIMING
2.7
READ
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (If ORG pin is low or A-Version
devices) or 16-bit (If ORG pin is high or B-version
devices) output string. The output data bits will toggle on
the rising edge of the CLK and are stable after the spec-
ified time delay (TPD). Sequential read is possible when
CS is held high. The memory data will automatically cycle
to the next register and output sequentially.
FIGURE 2-7:
READ TIMING
CS
CLK
DI
10
00
0
X
X
TCSL
1X
CS
CLK
DI
00
1
X
TCSL
CS
CLK
DI
DO
11
0
An
A0
HIGH-Z
0Dx
D0
Dx
D0
Dx
D0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 93C56AEP | IGBT Module; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V |
| 93C56AESN | IGBT Module; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V |
| 93AA66CEPG | 4K Microwire Compatible Serial EEPROM |
| 93LC66CEPG | 4K Microwire Compatible Serial EEPROM |
| 93C66CEPG | 4K Microwire Compatible Serial EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93C56A-E/CH | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K-16K Microwire Compatible Serial EEPROMs |
| 93C56A-E/MC | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2K Microwire Compatible Serial EEPROM |
| 93C56AE/MS | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2K Microwire Compatible Serial EEPROM |
| 93C56A-E/MS | 功能描述:電可擦除可編程只讀存儲器 256x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93C56AE/MSG | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2K Microwire Compatible Serial EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復。