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參數(shù)資料
| 型號： | 93C56A |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No |
| 中文描述： | 汽車溫度2K 5.0V Microwire串行EEPROM的 |
| 文件頁數(shù)： | 2/24頁 |
| 文件大?。?/td> | 405K |
| 代理商： | 93C56A |
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
DS21794B-page 10
2003 Microchip Technology Inc.
2.9
WRITE ALL (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
For 93AA56A/B/C and 93LC56A/B/C devices, after the
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C56A/B/C devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL
instruction does not require an ERAL instruction
but the chip must be in the EWEN status.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
Note:
Issuing a START bit and then taking CS low
will clear the READY/BUSY status from
DO.
VCC must be
≥ 4.5V for proper operation of WRAL.
FIGURE 2-10:
WRAL TIMING FOR 93AA AND 93LC DEVICES
FIGURE 2-11:
WRAL TIMING FOR 93C DEVICES
CS
CLK
DI
DO
HIGH-Z
1
0
01
X
X
Dx
D0
HIGH-Z
BUSY
READY
TWL
VCC must be
≥ 4.5V for proper operation of WRAL.
TCSL
TSV
TCZ
CS
CLK
DI
DO
HIGH-Z
1
0
01
X
X
Dx
D0
HIGH-Z
BUSY
READY
TWL
TCSL
TSV
TCZ
相關PDF資料 |
PDF描述 |
|---|---|
| 93C56AEP | IGBT Module; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V |
| 93C56AESN | IGBT Module; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V |
| 93AA66CEPG | 4K Microwire Compatible Serial EEPROM |
| 93LC66CEPG | 4K Microwire Compatible Serial EEPROM |
| 93C66CEPG | 4K Microwire Compatible Serial EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 93C56A-E/CH | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K-16K Microwire Compatible Serial EEPROMs |
| 93C56A-E/MC | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2K Microwire Compatible Serial EEPROM |
| 93C56AE/MS | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2K Microwire Compatible Serial EEPROM |
| 93C56A-E/MS | 功能描述:電可擦除可編程只讀存儲器 256x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93C56AE/MSG | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2K Microwire Compatible Serial EEPROM |
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