參數(shù)資料
型號: 93C46BT/SN
元件分類: PROM
英文描述: 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: 0.150 INCH, PLASTIC, SOIC-8
文件頁數(shù): 9/12頁
文件大?。?/td> 211K
代理商: 93C46BT/SN
93C46B
DS21172E-page 6
2001 Microchip Technology Inc.
3.6
ERASE/WRITE Disable and Enable
(EWDS/EWEN)
The device powers up in the ERASE/WRITE Disable
(EWDS) state. All programming modes must be pre-
ceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or Vcc is removed from the device. To protect against
accidental data disturbance, the EWDS instruction can
be used to disable all ERASE/WRITE functions and
should follow all programming operations. Execution of
a READ instruction is independent of both the EWDS
and EWEN instructions.
3.7
READ
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 16-bit output string. The output
data bits will toggle on the rising edge of the CLK and
are stable after the specified time delay (TPD). Sequen-
tial read is possible when CS is held high. The memory
data will automatically cycle to the next register and
output sequentially.
FIGURE 3-4:
EWDS TIMING
FIGURE 3-5:
EWEN TIMING
FIGURE 3-6:
READ TIMING
CS
CLK
DI
10
00
0
X
X
TCSL
1X
CS
CLK
DI
00
1
X
TCSL
CS
CLK
DI
DO
11
0
An
A0
HIGH-Z
0Dx
D0
Dx
D0
Dx
D0
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93C46B/SM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
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