參數(shù)資料
型號: 93C46BT/SN
元件分類: PROM
英文描述: 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: 0.150 INCH, PLASTIC, SOIC-8
文件頁數(shù): 5/12頁
文件大?。?/td> 211K
代理商: 93C46BT/SN
93C46B
DS21172E-page 2
2001 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
VCC...................................................................................7.0V
All inputs and outputs w.r.t. VSS .............. -0.6V to VCC +1.0V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-65°C to +125°C
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins................................................4 kV
*Notice: Stresses above those listed under “Maximum ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
TABLE 1-1
PIN FUNCTION TABLE
Name
Function
CS
Chip Select
CLK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
VSS
Ground
NC
No Connect
VCC
Power Supply
TABLE 1-2
DC AND AC ELECTRICAL CHARACTERISTICS
All parameters apply over
the specified operating
ranges unless otherwise
noted
Commercial (C) VCC = +4.5V to +5.5V TAMB = 0°C to +70°C
Industrial (I)
VCC = +4.5V to +5.5V TAMB = -40°C to +85°C
Automotive (E)
VCC = +4.5V to +5.5V TAMB = -40°C to +125°C
Parameter
Symbol
Min.
Max.
Units
Conditions
High level input voltage
VIH
2.0
VCC +1
V
Low level input voltage
VIL
-0.3
0.8
V
Low level output voltage
VOL
0.4
V
IOL = 2.1 mA; VCC = 4.5V
High level output voltage
VOH
2.4
VIOH = -400 A; VCC = 4.5V
Input leakage current
ILI
-10
10
A
VIN = VSS to VCC
Output leakage current
ILO
-10
10
A
VOUT = VSS to VCC
Pin capacitance
(all inputs/outputs)
CIN, COUT
7pF
VIN/VOUT = 0 V (Notes 1 & 2)
TAMB = +25°C, FCLK = 1 MHz
Operating current
ICC read
1
mA
ICC write
1.5
mA
Standby current
ICCS
1A
CS = VSS; DI = VSS
Clock frequency
FCLK
2MHz
VCC = 4.5V
Clock high time
TCKH
250
ns
Clock low time
TCKL
250
ns
Chip select setup time
TCSS
50
ns
Relative to CLK
Chip select hold time
TCSH
0
ns
Relative to CLK
Chip select low time
TCSL
250
ns
Data input setup time
TDIS
100
ns
Relative to CLK
Data input hold time
TDIH
100
ns
Relative to CLK
Data output delay time
TPD
400
ns
CL = 100 pF
Data output disable time
TCZ
100
ns
CL = 100 pF (Note 2)
Status valid time
TSV
500
ns
CL = 100 pF
Program cycle time
TWC
2ms
ERASE/WRITE mode
TEC
6
ms
ERAL mode
TWL
15
ms
WRAL mode
Endurance
1M
cycles
25°C, VCC = 5.0V, Block Mode (Note 3)
Note 1: This parameter is tested at TAMB = 25°C and FCLK = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
3: This application is not tested but ensured by characterization. For endurance estimates in a specific applica-
tion, please consult the Total Endurance Model which may be obtained on our website:
www.microchip.com
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