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參數(shù)資料
| 型號： | 93AA66B-I/OTG |
| 元件分類： | PROM |
| 英文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 封裝： | LEAD FREE, PLASTIC, SC-74A, SOT-23, 6 PIN |
| 文件頁數(shù)： | 7/38頁 |
| 文件大?。?/td> | 703K |
| 代理商： | 93AA66B-I/OTG |
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2005 Microchip Technology Inc.
DS21929A-page 15
93XX46X/56X/66X/76X/86X
3.8
WRITE
The WRITE instruction is followed by 8 bits (If ORG is
low or A-version devices) or 16 bits (If ORG pin is high
or B-version devices) of data which are written into the
specified address. For 93AAXX and 93LCXX devices,
after the last data bit is clocked into DI, the falling edge
of CS initiates the self-timed auto-erase and program-
ming cycle. For 93CXX devices, the self-timed auto-
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
FIGURE 3-8:
WRITE TIMING FOR 93AAXX AND 93LCXX DEVICES
FIGURE 3-9:
WRITE TIMING FOR 93CXX DEVICES
Note:
For devices with PE functionality such as
the 93XX76C or 93XX86C, the write
sequence requires a logic low signal on
the PE pin prior to the rising edge of the
last data bit.
Note:
After the Write cycle is complete, issuing a
Start bit and then taking CS low will clear
the Ready/Busy status from DO.
CS
CLK
DI
DO
1
0
1
An
A0
Dx
D0
Busy
Ready
High-Z
Twc
TCSL
TCZ
TSV
CS
CLK
DI
DO
1
0
1
An
A0
Dx
D0
Busy
Ready
High-Z
Twc
TCSL
TCZ
TSV
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 93LC46B-TE/SN | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC46B-TI/OTX | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 93AA46B-I/MSGX | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93AA46C-I/MSGX | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C46B-TE/STX | 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93AA66BT-I/MC | 功能描述:電可擦除可編程只讀存儲器 4K 256X16 SER EE 1.8V IND RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93AA66BT-I/MNY | 功能描述:電可擦除可編程只讀存儲器 4K 256X16 SER EE 1.8V IND RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93AA66BT-I/MS | 功能描述:電可擦除可編程只讀存儲器 256x16 - 1.8V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93AA66BT-I/MSG | 功能描述:電可擦除可編程只讀存儲器 256x16 - 1.8V Lead Free Package RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93AA66BT-I/OT | 功能描述:電可擦除可編程只讀存儲器 256x16 - 1.8V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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