2003 Oct 22
7
Philips Semiconductors
Product specication
High speed CAN transceiver
TJA1050
Notes
1. All parameters are guaranteed over the virtual junction temperature range by design, but only 100 % tested at 125
°C
ambient temperature for dies on wafer level and in addition to this 100 % tested at 25
°C ambient temperature for
cased products, unless specied otherwise.
2. For bare die, all parameters are only guaranteed if the backside of the bare die is connected to ground.
Io(sc)(CANH)
short-circuit output current at
pin CANH
VCANH =0V; VTXD =0V 45
70
95
mA
Io(sc)(CANL)
short-circuit output current at
pin CANL
VCANL =36V;
VTXD =0V
45
70
100
mA
Vi(dif)(th)
differential receiver threshold
voltage
12V<VCANL < +12 V;
12V<VCANH < +12 V;
see Fig.5
0.5
0.7
0.9
V
Vi(dif)(hys)
differential receiver input
voltage hysteresis
12V<VCANL < +12 V;
12V<VCANH < +12 V;
see Fig.5
50
70
100
mV
Ri(cm)(CANH)
common mode input
resistance at pin CANH
15
25
35
k
Ri(cm)(CANL)
common mode input
resistance at pin CANL
15
25
35
k
Ri(cm)(m)
matching between
pin CANH and pin CANL
common mode input
resistance
VCANH =VCANL
3
0
+3
%
Ri(dif)
differential input resistance
25
50
75
k
Ci(CANH)
input capacitance at
pin CANH
VTXD =VCC; not tested
7.5
20
pF
Ci(CANL)
input capacitance at
pin CANL
VTXD =VCC; not tested
7.5
20
pF
Ci(dif)
differential input capacitance VTXD =VCC; not tested
3.75
10
pF
ILI(CANH)
input leakage current at
pin CANH
VCC =0V; VCANH = 5 V
100
170
250
A
ILI(CANL)
input leakage current at
pin CANL
VCC =0V; VCANL = 5 V
100
170
250
A
Thermal shutdown
Tj(sd)
shutdown junction
temperature
155
165
180
°C
Timing characteristics (see Figs.6 and 7)
td(TXD-BUSon)
delay TXD to bus active
VS = 0 V
25
55
110
ns
td(TXD-BUSoff)
delay TXD to bus inactive
VS = 0 V
25
60
95
ns
td(BUSon-RXD)
delay bus active to RXD
VS = 0 V
20
50
110
ns
td(BUSoff-RXD)
delay bus inactive to RXD
VS = 0 V
45
95
155
ns
tdom(TXD)
TXD dominant time for
time-out
VTXD = 0 V
250
450
750
s
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT