參數資料
型號: 935267010117
廠商: NXP SEMICONDUCTORS
元件分類: 模擬信號調理
英文描述: SPECIALTY ANALOG CIRCUIT, CQCC24
封裝: LCC-24
文件頁數: 2/17頁
文件大小: 476K
代理商: 935267010117
2000 January
10
Philips Semiconductors
Objective specification
Frame Transfer CCD Image Sensor
FXA 1012
Performance
The test conditions for the performance characteristics in the still
mode of operation are as follows:
All values are measured using typical operating conditions.
Integration time = 1/30 sec (unless specified otherwise).
Test temperature = 60°C (333K).
1 Charge Transfer Efficiency values are expressed as the value per gate transfer.
2 The sensitivity when a light source directly illuminates the CCD.
3 Shading is defined as the one-
σ value of the pixel output distribution expressed as a percentage of the mean value output (low-pass image).
4 Difference in shading between the four colour planes, with standard imaging condition, still mode.
5 Difference in average green signal between ‘green in red line’ and ‘green in blue line’, with standard imaging condition, still mode
6 Q
max is determined from the lowpass filtered image.
7 Overexposure over entire area while maintaining good Vertical Anti-Blooming (VAB). It is tested by measuring the dark line.
The light source is a 3200K lamp with a 1.7mm thick BG40 infrared
cut-off filter; F=16.
Vertical Anti-Blooming condition
Horizontal transport frequency = 25MHz.
Performance Characteristics
Min.
Typical
Max.
Unit
Charge Transfer Efficiency
1 vertical
Charge Transfer Efficiency
1 horizontal
Image lag
Sensitivity, green S
G
2
Sensitivity, red S
R
2
Sensitivity, blue S
B
2
Sensitivity Ratio S
G / SR
Sensitivity Ratio S
G / SB
Sensitivity Ratio S
R / SB
Shading per colour plane
3
Differential colour shading
4
PRNU per colour plane
Green–green difference
5
Power consumption (Still mode)
Power consumption (Monitoring mode)
Full-well capacity saturation level (Q
max)
6
Saturation signal
Dynamic range at 20°C : 20log(Q
max /noise electrons)
Overexposure
7
handling
40
35
720
0.999997
295
240
175
1.25
1.7
1.4
2
0.8
50
45
1000
72
100
0
2.5
5
60
55
1500
%
mV/lux.s
%
mW
x 10
3
mV
dB
x Q
max level
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