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參數(shù)資料
| 型號(hào)： | 935265482112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | LVC/LCX/Z SERIES, HEX 1-INPUT NON-INVERT GATE, PDSO14 |
| 封裝： | 4.40 MM, PLASTIC, MO-153, SOT-402-1, TSSOP-14 |
| 文件頁數(shù)： | 15/19頁 |
| 文件大?。?/td> | 149K |
| 代理商： | 935265482112 |
2003 Feb 25
5
Philips Semiconductors
Product specication
Hex buffer with open-drain outputs
74LVC07A
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70
°C derate linearly with 8 mW/K.
For TSSOP14 packages: above 60
°C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C derate linearly with 4.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
active mode
0
5.5
V
high-impedance mode
0
5.5
V
Tamb
operating ambient temperature
40
+85
°C
tr,tf
input rise and fall ratios
VCC = 1.65 to 2.7 V
0
20
ns/V
VCC = 2.7 to 5.5 V
0
10
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
0.5
+6.5
V
IIK
input diode current
VI <0
50
mA
VI
input voltage
note 1
0.5
+6.5
V
IOK
output clamping diode current
VO <0
50
mA
VO
output voltage
active mode; note 1
0.5
+6.5
V
high-impedance mode; note 1
0.5
+6.5
V
IO
output source or sink current
VO =0toVCC
50
mA
ICC, IGND
VCC or GND current
±100
mA
Tstg
storage temperature
65
+150
°C
Ptot
power dissipation
Tamb = 40 to +125 °C; note 2
500
mW
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