參數(shù)資料
型號: 935264477112
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: TELEPHONE SPEECH CKT, PDSO40
封裝: PLASTIC, SOT-158, VSOP-40
文件頁數(shù): 14/39頁
文件大?。?/td> 205K
代理商: 935264477112
1999 Apr 08
21
Philips Semiconductors
Product specication
Speech and loudspeaker amplier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
Zi(HFTX)
input impedance between pins
HFTX and GND
20
k
Z
i(HFRX)
input impedance between pins
HFRX and GND
20
k
Zi(TXAUX)
input impedance between pins
TXAUX and GND
20
k
Z
i(RAUX)
input impedance between pins
RAUX and GND
20
k
TX ampliers; see note 1
TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC
AND LN)
Gv(MIC-LN)
voltage gain from pin MIC+/MIC
to LN
VMIC = 5 mV (RMS)
43.3
44.3
45.3
dB
G
v(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.25
dB
G
v(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.25
dB
CMRR
common mode rejection ratio
80
dB
THD
total harmonic distortion at pin
LN
VLN = 1.4 V (RMS)
2%
Iline = 4 mA;
VLN = 0.12 V (RMS)
10
%
Vno(LN)
noise output voltage at pin LN;
pins MIC+/MIC
shorted
through 200
psophometrically
weighted (p53 curve)
77.5
dBmp
G
v(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
dB
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
Gv(DTMF-LN)
voltage gain from pin DTMF to
LN
VDTMF = 50 mV (RMS)
24.35
25.35
26.35
dB
Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.25
dB
G
v(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.25
dB
G
v(mute)
gain reduction if not activated
HFC = LOW;
MUTT = HIGH;
MUTR = HIGH;
AUXC = LOW
60
80
dB
Gv(DTMF-RECO)
voltage gain from pin DTMF to
RECO
VDTMF = 50 mV (RMS)
16.5
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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