參數(shù)資料
型號： 935263906518
廠商： NXP SEMICONDUCTORS
元件分類： 通信及網(wǎng)絡(luò)
英文描述： SPECIALTY TELECOM CIRCUIT, PDSO24
封裝： PLASTIC, SOT-355-1, TSSOP-24
文件頁數(shù)： 6/32頁
文件大?。?/td> 222K
代理商： 935263906518
Philips Semiconductors
Product specification
SA3600
Low voltage dual-band RF front-end
1999 Nov 02
14
Frequency (MHz)
1
dB
(dBm)
–18.0
–19.0
–20.0
–21.0
SR02213
+25
° C
+85
° C
–40
° C
865
870
875
880
885
890
895
900
–22.0
Figure 14.
LB LNA 1 dB compression versus frequency
(high gain mode)
Frequency (MHz)
1920
1930
1940
1950
1960
1970
1980
1990
2000
SR02214
+25
° C
+85
° C
–40
° C
–11.0
–12.0
–13.0
–14.0
–15.0
–16.0
–17.0
1
dB
(dBm)
Figure 15.
HB LNA 1 dB compression versus frequency
(high gain mode)
Frequency (MHz)
17.0
16.5
16.0
15.0
1920
1930
1940
1950
1960
1970
1980
1990
2000
SR02215
+25
° C
+85
° C
–40
° C
15.5
Gain
(dB)
Figure 16.
HB LNA gain versus frequency
Frequency (MHz)
–13.0
–15.0
–16.0
–17.0
–18.0
1920
1930
1940
1950
1960
1970
1980
1990
2000
Low
gain
(dB)
SR02216
+25
° C
+85
° C
–40
° C
–14.0
–12.0
Figure 17.
HB LNA low gain versus frequency
Frequency (MHz)
3.0
2.5
2.0
1.5
1920
1930
1940
1950
1960
1970
1980
1990
2000
IIP3
(dBm)
SR02217
+25
° C
+85
° C
–40
° C
1.0
Figure 18.
HB LNA noise figure versus frequency
(high gain mode)
Frequency (MHz)
0.0
–2.0
–4.0
–6.0
–10.0
1920
1930
1940
1950
1960
1970
1980
1990
2000
IIP3
(dBm)
SR02218
+25
° C
+85
° C
–40
° C
–8.0
Figure 19.
HB LNA IIP3 versus frequency
(high gain mode)
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