參數(shù)資料
型號(hào)： 935263906518
廠商： NXP SEMICONDUCTORS
元件分類： 通信及網(wǎng)絡(luò)
英文描述： SPECIALTY TELECOM CIRCUIT, PDSO24
封裝： PLASTIC, SOT-355-1, TSSOP-24
文件頁(yè)數(shù)： 12/32頁(yè)
文件大?。?/td> 222K
代理商： 935263906518
Philips Semiconductors
Product specification
SA3600
Low voltage dual-band RF front-end
2
1999 Nov 02
853–2183 22617
DESCRIPTION
The SA3600 is an integrated dual-band RF front-end that operates at
both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and
is designed in a 20 GHz fT BiCMOS process—QUBiC2.
The low-band (LB) receiver is a combined low-noise amplifier (LNA)
and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with
17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer
has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of
+6 dBm.
The high-band (HB) receiver is a combined low-noise amplifier (LNA)
and mixer, with the low-band and high-band mixers sharing the same
mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of
gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 8.5
dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
FEATURES
Low current consumption: LB I
CC = 14.5 mA; HB ICC = 20.5 mA
Outstanding low- and high-band noise figure
LNAs with gain control (30 dB gain step)
LO input and output buffers
Selectable frequency doubler
On chip logic for network selection and power down
Very small outline package
APPLICATIONS
800 to 1000 MHz analog and digital receivers
1800 to 2000 MHz digital receivers
Portable radios
Mobile communications equipment
PIN CONFIGURATION
SR01596
HB_LNA_OUT
GND
HB_LNA_IN
VCC
HB_MXR+_IN
HB_MXR–_IN
PD1
GND
HB_VCO_OUT
PD2
GND
LB_LNA_OUT
GND
LB_LNA_IN
VCC
LB_MXR_IN
GND
MXR+_OUT
GND
MXR–_OUT
LB_VCO_IN
PD3
HB_VCO_IN
LB_VCO_OUT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
SA3600
TSSOP24
Plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355–1
PIN DESCRIPTIONS
PIN
NO.
PIN NAME
DESCRIPTION
PIN
NO.
PIN NAME
DESCRIPTION
1
HB_LNA_OUT
Highband LNA output
13
HB_VCO_IN
Highband VCO input
2
GND
Ground
14
PD3
Power down control 3
3
HB_LNA_IN
Highband LNA input
15
LB_VCO_IN
Lowband VCO input
4
Vcc
Power supply
16
GND
Ground
5
HB_MXR+_IN
Highband mixer positive input
17
MXR–_OUT
Mixer negative output
6
HB_MXR–_IN
Highband mixer negative input
18
MXR+_OUT
Mixer positive output
7
PD1
Power down control 1
19
GND
Ground
8
GND
Ground
20
LB_MXR_IN
Lowband mixer input
9
HB_VCO_OUT
Highband VCO buffered output
21
VCC
Power supply
10
PD2
Power down control 2
22
LB_LNA_IN
Lowband LNA input
11
GND
Ground
23
GND
Ground
12
LB_VCO_OUT
Lowband VCO buffered output
24
LB_LNA_OUT
Lowband LNA output
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